IXKR47N60C5 Tech Spezifikatioune
IXYS - IXKR47N60C5 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXKR47N60C5
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | IXYS Corporation | |
| Vgs (th) (Max) @ Id | 3.5V @ 3mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | ISOPLUS247™ | |
| Serie | CoolMOS™ | |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 44A, 10V | |
| Power Dissipation (Max) | - | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 47A (Tc) | |
| Basis Produktnummer | IXKR47 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXKR47N60C5.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IXKR47N60C5 | IXKH70N60C5 | IXKH30N60C5 | IXKH24N60C5 |
| Hiersteller | IXYS | IXYS | IXYS | IXYS |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 47A (Tc) | 70A (Tc) | 30A (Tc) | 24A (Tc) |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Serie | CoolMOS™ | CoolMOS™ | CoolMOS™ | CoolMOS™ |
| Supplier Device Package | ISOPLUS247™ | TO-247AD | TO-247AD | TO-247AD |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V | 190 nC @ 10 V | 70 nC @ 10 V | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 100 V | 6800 pF @ 100 V | 2500 pF @ 10 V | 2000 pF @ 100 V |
| FET Feature | - | - | - | - |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Vgs (th) (Max) @ Id | 3.5V @ 3mA | 3.5V @ 3mA | 3.5V @ 1.1mA | 3.5V @ 790µA |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Basis Produktnummer | IXKR47 | IXKH70 | IXKH30 | IXKH24 |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 44A, 10V | 45mOhm @ 44A, 10V | 125mOhm @ 16A, 10V | 165mOhm @ 12A, 10V |
| Power Dissipation (Max) | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden IXKR47N60C5 PDF DataDhusts an IXYS Dokumentatioun fir IXKR47N60C5 - IXYS.
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IXTP50N20PIXYSMOSFET N-CH 200V 50A TO220AB
FQPF5N50CFTUonsemiMOSFET N-CH 500V 5A TO220F
BS107GonsemiMOSFET N-CH 200V 250MA TO92-3
FDP13AN06A0onsemiMOSFET N-CH 60V 10.9A/62A TO220IXKN45N80CIXYSMOSFET N-CH 800V 44A SOT-227B
SI3483CDV-T1-GE3Vishay SiliconixMOSFET P-CH 30V 8A 6TSOPIXKG25N80CIXYSMOSFET N-CH 800V 25A ISO264IXTP05N100IXYSMOSFET N-CH 1000V 750MA TO220ABIXKR25N80CIXYSMOSFET N-CH 800V 25A ISOPLUS247
SI2309CDS-T1-GE3Vishay SiliconixMOSFET P-CH 60V 1.6A SOT23-3IXKK85N60CIXYSMOSFET N-CH 600V 85A TO264AIXKH20N60C5IXYSMOSFET N-CH 600V 20A TO247ADIXKR40N60CIXYSMOSFET N-CH 600V 38A ISOPLUS247| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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