IXKH24N60C5 Tech Spezifikatioune
IXYS - IXKH24N60C5 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXKH24N60C5
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 3.5V @ 790µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247AD | |
Serie | CoolMOS™ | |
Rds On (Max) @ Id, Vgs | 165mOhm @ 12A, 10V | |
Power Dissipation (Max) | - | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 24A (Tc) | |
Basis Produktnummer | IXKH24 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXKH24N60C5.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXKH24N60C5 | TK5P50D(T6RSS-Q) | IRF5305STRRPBF | IXKN75N60C |
Hiersteller | IXYS | Toshiba Semiconductor and Storage | Infineon Technologies | IXYS |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Chassis Mount |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 600 V | 500 V | 55 V | 600 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 24A (Tc) | 5A (Ta) | 31A (Tc) | 75A (Tc) |
Rds On (Max) @ Id, Vgs | 165mOhm @ 12A, 10V | 1.5Ohm @ 2.5A, 10V | 60mOhm @ 16A, 10V | 36mOhm @ 50A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 100 V | 490 pF @ 25 V | 1200 pF @ 25 V | - |
Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 175°C (TJ) | -40°C ~ 150°C (TJ) |
Serie | CoolMOS™ | - | HEXFET® | CoolMOS™ |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Supplier Device Package | TO-247AD | D-Pak | D2PAK | SOT-227B |
Power Dissipation (Max) | - | 80W (Tc) | 3.8W (Ta), 110W (Tc) | 560W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V | 11 nC @ 10 V | 63 nC @ 10 V | 500 nC @ 10 V |
FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
Basis Produktnummer | IXKH24 | TK5P50 | IRF5305 | IXKN75 |
Vgs (Max) | ±20V | ±30V | ±20V | ±20V |
Package / Case | TO-247-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SOT-227-4, miniBLOC |
Vgs (th) (Max) @ Id | 3.5V @ 790µA | 4.4V @ 1mA | 4V @ 250µA | 3.9V @ 5mA |
Eroflueden IXKH24N60C5 PDF DataDhusts an IXYS Dokumentatioun fir IXKH24N60C5 - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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