IXFT60N50P3 Tech Spezifikatioune
IXYS - IXFT60N50P3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFT60N50P3
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5V @ 4mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-268AA | |
Serie | HiPerFET™, Polar3™ | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 30A, 10V | |
Power Dissipation (Max) | 1040W (Tc) | |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 6250 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | |
Basis Produktnummer | IXFT60 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFT60N50P3.
Produktiounsattriff | ||||
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Part Number | IXFT60N50P3 | IXFT30N50 | IXFT32N50Q | IXFX120N65X2 |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Supplier Device Package | TO-268AA | TO-268AA | TO-268AA | PLUS247™-3 |
Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V | 300 nC @ 10 V | 190 nC @ 10 V | 225 nC @ 10 V |
Basis Produktnummer | IXFT60 | IXFT30 | IXFT32 | IXFX120 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-247-3 Variant |
Rds On (Max) @ Id, Vgs | 100mOhm @ 30A, 10V | 160mOhm @ 15A, 10V | 160mOhm @ 16A, 10V | 24mOhm @ 60A, 10V |
Entworf fir Source Voltage (Vdss) | 500 V | 500 V | 500 V | 650 V |
Serie | HiPerFET™, Polar3™ | HiPerFET™ | HiPerFET™ | HiPerFET™, Ultra X2 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 1040W (Tc) | 360W (Tc) | 360W (Tc) | 1250W (Tc) |
Vgs (Max) | ±30V | ±20V | ±20V | ±30V |
Vgs (th) (Max) @ Id | 5V @ 4mA | 4V @ 4mA | 4.5V @ 4mA | 5.5V @ 8mA |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 6250 pF @ 25 V | 5700 pF @ 25 V | 4925 pF @ 25 V | 15500 pF @ 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | 30A (Tc) | 32A (Tc) | 120A (Tc) |
Package protegéieren | Tube | Tube | Tube | Tube |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden IXFT60N50P3 PDF DataDhusts an IXYS Dokumentatioun fir IXFT60N50P3 - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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