IXFT32N50Q Tech Spezifikatioune
IXYS - IXFT32N50Q technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFT32N50Q
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 4.5V @ 4mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-268AA | |
Serie | HiPerFET™ | |
Rds On (Max) @ Id, Vgs | 160mOhm @ 16A, 10V | |
Power Dissipation (Max) | 360W (Tc) | |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4925 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 32A (Tc) | |
Basis Produktnummer | IXFT32 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFT32N50Q.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFT32N50Q | IXFX120N20 | IXFT50N60P3-TRL | IXFT26N50Q |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 4.5V @ 4mA | 4V @ 8mA | 5V @ 4mA | 4.5V @ 4mA |
Input Capacitance (Ciss) (Max) @ Vds | 4925 pF @ 25 V | 9100 pF @ 25 V | 6300 pF @ 25 V | 3900 pF @ 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 32A (Tc) | 120A (Tc) | 50A (Tc) | 26A (Tc) |
Basis Produktnummer | IXFT32 | IXFX120 | IXFT50 | IXFT26 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-247-3 Variant | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount |
Entworf fir Source Voltage (Vdss) | 500 V | 200 V | 600 V | 500 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±20V | ±30V | ±20V |
Supplier Device Package | TO-268AA | PLUS247™-3 | TO-268 | TO-268AA |
Rds On (Max) @ Id, Vgs | 160mOhm @ 16A, 10V | 17mOhm @ 60A, 10V | 145mOhm @ 25A, 10V | 200mOhm @ 13A, 10V |
Power Dissipation (Max) | 360W (Tc) | 560W (Tc) | 1.04kW (Tc) | 300W (Tc) |
Serie | HiPerFET™ | HiPerFET™ | HiPerFET™, Polar3™ | HiPerFET™ |
Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V | 300 nC @ 10 V | 94 nC @ 10 V | 95 nC @ 10 V |
FET Feature | - | - | - | - |
Package protegéieren | Tube | Tube | Tape & Reel (TR) | Tube |
Eroflueden IXFT32N50Q PDF DataDhusts an IXYS Dokumentatioun fir IXFT32N50Q - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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