IXFN82N60P Tech Spezifikatioune
IXYS - IXFN82N60P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFN82N60P
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5V @ 8mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-227B | |
Serie | HiPerFET™, Polar | |
Rds On (Max) @ Id, Vgs | 75mOhm @ 41A, 10V | |
Power Dissipation (Max) | 1040W (Tc) | |
Package / Case | SOT-227-4, miniBLOC | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Chassis Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 23000 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 72A (Tc) | |
Basis Produktnummer | IXFN82 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFN82N60P.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFN82N60P | IXFP110N15T2 | IXFP10N60P | IXFN80N50Q2 |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | IXFN82 | IXFP110 | IXFP10 | IXFN80 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Supplier Device Package | SOT-227B | TO-220-3 | TO-220-3 | SOT-227B |
Vgs (th) (Max) @ Id | 5V @ 8mA | 4.5V @ 250µA | 5.5V @ 1mA | 4.5V @ 8mA |
Vgs (Max) | ±30V | ±20V | ±30V | ±30V |
Serie | HiPerFET™, Polar | HiPerFET™, TrenchT2™ | HiPerFET™, Polar | HiPerFET™, Q2 Class |
Package / Case | SOT-227-4, miniBLOC | TO-220-3 | TO-220-3 | SOT-227-4, miniBLOC |
Package protegéieren | Tube | Tube | Tube | Tube |
Input Capacitance (Ciss) (Max) @ Vds | 23000 pF @ 25 V | 8600 pF @ 25 V | 1610 pF @ 25 V | 12800 pF @ 25 V |
Power Dissipation (Max) | 1040W (Tc) | 480W (Tc) | 200W (Tc) | 890W (Tc) |
Mounting Type | Chassis Mount | Through Hole | Through Hole | Chassis Mount |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 72A (Tc) | 110A (Tc) | 10A (Tc) | 72A (Tc) |
Rds On (Max) @ Id, Vgs | 75mOhm @ 41A, 10V | 13mOhm @ 55A, 10V | 740mOhm @ 5A, 10V | 60mOhm @ 500mA, 10V |
Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V | 150 nC @ 10 V | 32 nC @ 10 V | 250 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 600 V | 150 V | 600 V | 500 V |
Eroflueden IXFN82N60P PDF DataDhusts an IXYS Dokumentatioun fir IXFN82N60P - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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