IXFN80N50 Tech Spezifikatioune
IXYS - IXFN80N50 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFN80N50
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | IXYS Corporation | |
| Vgs (th) (Max) @ Id | 4.5V @ 8mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-227B | |
| Serie | HiPerFET™ | |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 500mA, 10V | |
| Power Dissipation (Max) | 700W (Tc) | |
| Package / Case | SOT-227-4, miniBLOC | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 9890 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 500 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 66A (Tc) | |
| Basis Produktnummer | IXFN80 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFN80N50.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IXFN80N50 | IXFN80N50P | IXFN80N50Q2 | IXFN80N48 |
| Hiersteller | IXYS | IXYS | IXYS | IXYS |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Mounting Type | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount |
| Basis Produktnummer | IXFN80 | IXFN80 | IXFN80 | IXFN80 |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V | 195 nC @ 10 V | 250 nC @ 10 V | 380 nC @ 10 V |
| Supplier Device Package | SOT-227B | SOT-227B | SOT-227B | SOT-227B |
| Serie | HiPerFET™ | HiPerFET™, Polar | HiPerFET™, Q2 Class | HiPerFET™ |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 9890 pF @ 25 V | 12700 pF @ 25 V | 12800 pF @ 25 V | 9890 pF @ 25 V |
| Package / Case | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 66A (Tc) | 66A (Tc) | 72A (Tc) | 80A (Tc) |
| Entworf fir Source Voltage (Vdss) | 500 V | 500 V | 500 V | 480 V |
| Vgs (Max) | ±20V | ±30V | ±30V | ±20V |
| Power Dissipation (Max) | 700W (Tc) | 700W (Tc) | 890W (Tc) | 700W (Tc) |
| Vgs (th) (Max) @ Id | 4.5V @ 8mA | 5V @ 8mA | 4.5V @ 8mA | 4V @ 8mA |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 500mA, 10V | 65mOhm @ 500mA, 10V | 60mOhm @ 500mA, 10V | 45mOhm @ 500mA, 10V |
Eroflueden IXFN80N50 PDF DataDhusts an IXYS Dokumentatioun fir IXFN80N50 - IXYS.
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IXFN79N20Fujitsu Electronics America, Inc.IGBT ModuleIXFN80N60IXYS / LittelfuseIGBT ModuleIXFN80N60PIXYS / LittelfuseIGBT ModuleIXFN75N120IXYS / LittelfuseIGBT ModuleIXFN80N60P3IXYSMOSFET N-CH 600V 66A SOT-227BIXFN82N60Q3IXYSMOSFET N-CH 600V 66A SOT227BIXFN73N20IXYS / LittelfuseIGBT ModuleIXFN80N50Q3IXYSMOSFET N-CH 500V 63A SOT227BIXFN73N30QIXYSMOSFET N-CH 300V 73A SOT-227BIXFN82N60PIXYSMOSFET N-CH 600V 72A SOT-227B| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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