IXFK120N20P Tech Spezifikatioune
IXYS - IXFK120N20P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFK120N20P
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5V @ 4mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-264AA (IXFK) | |
Serie | HiPerFET™, Polar | |
Rds On (Max) @ Id, Vgs | 22mOhm @ 500mA, 10V | |
Power Dissipation (Max) | 714W (Tc) | |
Package / Case | TO-264-3, TO-264AA | |
Package protegéieren | Box |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | |
Basis Produktnummer | IXFK120 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFK120N20P.
Produktiounsattriff | ||||
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Part Number | IXFK120N20P | IXFK120N20 | IXFK120N30T | IXFK150N10 |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Basis Produktnummer | IXFK120 | IXFK120 | IXFK120 | IXFK150 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package protegéieren | Box | Tube | Tube | Tube |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Power Dissipation (Max) | 714W (Tc) | 560W (Tc) | 960W (Tc) | 500W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package / Case | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-264-3, TO-264AA |
Entworf fir Source Voltage (Vdss) | 200 V | 200 V | 300 V | 100 V |
Serie | HiPerFET™, Polar | HiPerFET™ | HiPerFET™, Trench | HiPerFET™ |
Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V | 9100 pF @ 25 V | 20000 pF @ 25 V | 9000 pF @ 25 V |
Vgs (th) (Max) @ Id | 5V @ 4mA | 4V @ 8mA | 5V @ 4mA | 4V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V | 300 nC @ 10 V | 265 nC @ 10 V | 360 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | 120A (Tc) | 120A (Tc) | 150A (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 22mOhm @ 500mA, 10V | 17mOhm @ 60A, 10V | 24mOhm @ 60A, 10V | 12mOhm @ 75A, 10V |
FET Feature | - | - | - | - |
Supplier Device Package | TO-264AA (IXFK) | TO-264AA (IXFK) | TO-264AA (IXFK) | TO-264AA (IXFK) |
Eroflueden IXFK120N20P PDF DataDhusts an IXYS Dokumentatioun fir IXFK120N20P - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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