IXFH96N20P Tech Spezifikatioune
IXYS - IXFH96N20P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFH96N20P
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5V @ 4mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247AD (IXFH) | |
Serie | HiPerFET™, Polar | |
Rds On (Max) @ Id, Vgs | 24mOhm @ 500mA, 10V | |
Power Dissipation (Max) | 600W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Box |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 96A (Tc) | |
Basis Produktnummer | IXFH96 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFH96N20P.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFH96N20P | IXFH80N65X2 | IXFK120N20 | IXFH9N80 |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 5V @ 4mA | 5.5V @ 4mA | 4V @ 8mA | 4.5V @ 2.5mA |
Supplier Device Package | TO-247AD (IXFH) | TO-247 (IXTH) | TO-264AA (IXFK) | TO-247AD (IXFH) |
Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V | 143 nC @ 10 V | 300 nC @ 10 V | 130 nC @ 10 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Rds On (Max) @ Id, Vgs | 24mOhm @ 500mA, 10V | 40mOhm @ 40A, 10V | 17mOhm @ 60A, 10V | 900mOhm @ 500mA, 10V |
Vgs (Max) | ±20V | ±30V | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V | 8245 pF @ 25 V | 9100 pF @ 25 V | 2600 pF @ 25 V |
Power Dissipation (Max) | 600W (Tc) | 890W (Tc) | 560W (Tc) | 180W (Tc) |
Package protegéieren | Box | Tube | Tube | Tube |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 200 V | 650 V | 200 V | 800 V |
FET Feature | - | - | - | - |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Serie | HiPerFET™, Polar | HiPerFET™, Ultra X2 | HiPerFET™ | HiPerFET™ |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 96A (Tc) | 80A (Tc) | 120A (Tc) | 9A (Tc) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-264-3, TO-264AA | TO-247-3 |
Basis Produktnummer | IXFH96 | IXFH80 | IXFK120 | IXFH9 |
Eroflueden IXFH96N20P PDF DataDhusts an IXYS Dokumentatioun fir IXFH96N20P - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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