IXFB150N65X2 Tech Spezifikatioune
IXYS - IXFB150N65X2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFB150N65X2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5.5V @ 8mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PLUS264™ | |
Serie | HiPerFET™, Ultra X2 | |
Rds On (Max) @ Id, Vgs | 17mOhm @ 75A, 10V | |
Power Dissipation (Max) | 1560W (Tc) | |
Package / Case | TO-264-3, TO-264AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 20400 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 430 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 650 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 150A (Tc) | |
Basis Produktnummer | IXFB150 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFB150N65X2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFB150N65X2 | IXFB170N30P | IXFB70N60Q2 | IXFB100N50P |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Entworf fir Source Voltage (Vdss) | 650 V | 300 V | 600 V | 500 V |
Serie | HiPerFET™, Ultra X2 | HiPerFET™, Polar | HiPerFET™, Q2 Class | HiPerFET™, Polar |
FET Feature | - | - | - | - |
Package protegéieren | Tube | Tube | Tube | Tube |
Gate Charge (Qg) (Max) @ Vgs | 430 nC @ 10 V | 258 nC @ 10 V | 265 nC @ 10 V | 240 nC @ 10 V |
Vgs (th) (Max) @ Id | 5.5V @ 8mA | 4.5V @ 1mA | 5.5V @ 8mA | 5V @ 8mA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 20400 pF @ 25 V | 20000 pF @ 25 V | 12000 pF @ 25 V | 20000 pF @ 25 V |
Basis Produktnummer | IXFB150 | IXFB170 | IXFB70 | IXFB100 |
Power Dissipation (Max) | 1560W (Tc) | 1250W (Tc) | 890W (Tc) | 1890W (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
Supplier Device Package | PLUS264™ | PLUS264™ | PLUS264™ | PLUS264™ |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±30V | ±20V | ±30V | ±30V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Rds On (Max) @ Id, Vgs | 17mOhm @ 75A, 10V | 18mOhm @ 85A, 10V | 88mOhm @ 35A, 10V | 49mOhm @ 50A, 10V |
Package / Case | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-264-3, TO-264AA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 150A (Tc) | 170A (Tc) | 70A (Tc) | 100A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Eroflueden IXFB150N65X2 PDF DataDhusts an IXYS Dokumentatioun fir IXFB150N65X2 - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.