IXFB30N120P Tech Spezifikatioune
IXYS - IXFB30N120P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFB30N120P
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 6.5V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PLUS264™ | |
Serie | HiPerFET™, Polar | |
Rds On (Max) @ Id, Vgs | 350mOhm @ 500mA, 10V | |
Power Dissipation (Max) | 1250W (Tc) | |
Package / Case | TO-264-3, TO-264AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 22500 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 310 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 1200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Tc) | |
Basis Produktnummer | IXFB30 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFB30N120P.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFB30N120P | IXFB40N110P | IXFB100N50P | IXFA7N80P |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Package protegéieren | Tube | Tube | Tube | Tube |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Supplier Device Package | PLUS264™ | PLUS264™ | PLUS264™ | TO-263AA (IXFA) |
Vgs (th) (Max) @ Id | 6.5V @ 1mA | 6.5V @ 1mA | 5V @ 8mA | 5V @ 1mA |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 1250W (Tc) | 1250W (Tc) | 1890W (Tc) | 200W (Tc) |
Package / Case | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-264-3, TO-264AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Rds On (Max) @ Id, Vgs | 350mOhm @ 500mA, 10V | 260mOhm @ 20A, 10V | 49mOhm @ 50A, 10V | 1.44Ohm @ 3.5A, 10V |
Vgs (Max) | ±20V | ±30V | ±30V | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 22500 pF @ 25 V | 19000 pF @ 25 V | 20000 pF @ 25 V | 1890 pF @ 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Tc) | 40A (Tc) | 100A (Tc) | 7A (Tc) |
Basis Produktnummer | IXFB30 | IXFB40 | IXFB100 | IXFA7N80 |
Gate Charge (Qg) (Max) @ Vgs | 310 nC @ 10 V | 310 nC @ 10 V | 240 nC @ 10 V | 32 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 1200 V | 1100 V | 500 V | 800 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Serie | HiPerFET™, Polar | HiPerFET™, Polar | HiPerFET™, Polar | HiPerFET™, Polar |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount |
Eroflueden IXFB30N120P PDF DataDhusts an IXYS Dokumentatioun fir IXFB30N120P - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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