HUF75309P3 Tech Spezifikatioune
Harris Corporation - HUF75309P3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Harris Corporation - HUF75309P3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Harris Corporation | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | UltraFET™ | |
Rds On (Max) @ Id, Vgs | 70mOhm @ 19A, 10V | |
Power Dissipation (Max) | 55W (Tc) | |
Package / Case | TO-220-3 |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tube | |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 20 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 19A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Harris Corporation HUF75309P3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | HUF75309P3 | HUF75321D3S | HUF75321D3S | HUF75321D3ST |
Hiersteller | Harris Corporation | onsemi | Fairchild Semiconductor | onsemi |
Supplier Device Package | TO-220-3 | TO-252AA | TO-252, (D-Pak) | TO-252AA |
Package / Case | TO-220-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | UltraFET™ | UltraFET™ | UltraFET™ | UltraFET™ |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Entworf fir Source Voltage (Vdss) | 55 V | 55 V | 55 V | 55 V |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 20 V | 44 nC @ 20 V | 44 nC @ 20 V | 44 nC @ 20 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package protegéieren | Tube | Tube | Tube | Tape & Reel (TR) |
Power Dissipation (Max) | 55W (Tc) | 93W (Tc) | 93W (Tc) | 93W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 19A (Tc) | 20A (Tc) | 20A (Tc) | 20A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V | 680 pF @ 25 V | 680 pF @ 25 V | 680 pF @ 25 V |
Rds On (Max) @ Id, Vgs | 70mOhm @ 19A, 10V | 36mOhm @ 20A, 10V | 36mOhm @ 20A, 10V | 36mOhm @ 20A, 10V |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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