HUF75307D3ST Tech Spezifikatioune
Harris Corporation - HUF75307D3ST technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Harris Corporation - HUF75307D3ST
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Harris Corporation | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-252, (D-Pak) | |
| Serie | UltraFET™ | |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 13A, 10V | |
| Power Dissipation (Max) | 45W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 20 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 55 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Harris Corporation HUF75307D3ST.
| Produktiounsattriff | |
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 |
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|---|---|---|---|---|
| Part Number | HUF75307D3ST | HUF75229P3 | HUF75229P3 | HUF75309D3 |
| Hiersteller | Harris Corporation | onsemi | Fairchild Semiconductor | Harris Corporation |
| Mounting Type | Surface Mount | Through Hole | Through Hole | Through Hole |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 20 V | 75 nC @ 20 V | 75 nC @ 20 V | 24 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V | 1060 pF @ 25 V | 1060 pF @ 25 V | 350 pF @ 25 V |
| Supplier Device Package | TO-252, (D-Pak) | TO-220-3 | TO-220-3 | I-PAK |
| FET Feature | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 55 V | 50 V | 50 V | 55 V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-3 | TO-220-3 | TO-251-3 Short Leads, IPak, TO-251AA |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Bulk | Tube | Tube | Bulk |
| Serie | UltraFET™ | UltraFET™ | UltraFET™ | - |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 13A, 10V | 22mOhm @ 44A, 10V | 22mOhm @ 44A, 10V | 70mOhm @ 17A, 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Tc) | 44A (Tc) | 44A (Tc) | 17A (Tc) |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Power Dissipation (Max) | 45W (Tc) | 90W (Tc) | 90W (Tc) | 45W (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
HUF75229P3onsemiMOSFET N-CH 50V 44A TO220-3HUF75229P3Fairchild SemiconductorMOSFET N-CH 50V 44A TO220-3HUF75307D3ST MOSFairchild (onsemi)HUF75309D3Harris CorporationN-CHANNEL POWER MOSFETHUF75307T3ST136Harris Corporation13A, 55V, 0.090 OHM, N CHANNEL,
HUF75307D3STonsemiMOSFET N-CH 55V 15A TO252AA
HUF75307PIntersil (Renesas Electronics Corporation)HUF75307D3SHARRISHUF75307D3ST136Fairchild (onsemi)
HUF75307T3STonsemiMOSFET N-CH 55V 2.6A SOT223-4HUF75307D3Harris CorporationMOSFET N-CH 55V 15A IPAKHUF75307Fairchild (onsemi)HUF75307T3STFairchild SemiconductorMOSFET N-CH 55V 2.6A SOT223-4HUF75307D3 MOSFairchild (onsemi)HUF75307T3Fairchild (onsemi)HUF75307DS3SVBSEMI
HUF75307D3onsemiMOSFET N-CH 55V 15A IPAKHUF75229P3 75229PFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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