HUF75307D3 Tech Spezifikatioune
onsemi - HUF75307D3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - HUF75307D3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I-PAK | |
Serie | UltraFET™ | |
Rds On (Max) @ Id, Vgs | 90mOhm @ 15A, 10V | |
Power Dissipation (Max) | 45W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 20 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Tc) | |
Basis Produktnummer | HUF75 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi HUF75307D3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | HUF75307D3 | HUF75307T3ST | HUF75307D3ST | HUF75229P3 |
Hiersteller | onsemi | Fairchild Semiconductor | Harris Corporation | onsemi |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V | 250 pF @ 25 V | 250 pF @ 25 V | 1060 pF @ 25 V |
Entworf fir Source Voltage (Vdss) | 55 V | 55 V | 55 V | 50 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Tc) | 2.6A (Ta) | 15A (Tc) | 44A (Tc) |
Basis Produktnummer | HUF75 | - | - | HUF75 |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-261-4, TO-261AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-3 |
Package protegéieren | Tube | Bulk | Bulk | Tube |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 20 V | 17 nC @ 20 V | 20 nC @ 20 V | 75 nC @ 20 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | I-PAK | SOT-223-4 | TO-252, (D-Pak) | TO-220-3 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | - | 10V |
Serie | UltraFET™ | - | UltraFET™ | UltraFET™ |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Power Dissipation (Max) | 45W (Tc) | 1.1W (Ta) | 45W (Tc) | 90W (Tc) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 90mOhm @ 15A, 10V | 90mOhm @ 2.6A, 10V | 90mOhm @ 13A, 10V | 22mOhm @ 44A, 10V |
Eroflueden HUF75307D3 PDF DataDhusts an onsemi Dokumentatioun fir HUF75307D3 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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