1N3297AR Tech Spezifikatioune
GeneSiC Semiconductor - 1N3297AR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu GeneSiC Semiconductor - 1N3297AR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | GeneSiC Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 100 A | |
| Voltage - DC Reverse (Vr) (Max) | 1400 V | |
| Technologie | Standard, Reverse Polarity | |
| Supplier Device Package | DO-205AA (DO-8) | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-205AA, DO-8, Stud |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -40°C ~ 200°C | |
| Mounting Type | Chassis, Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 7 mA @ 1400 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 100A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | 1N3297AR |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu GeneSiC Semiconductor 1N3297AR.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | 1N3297AR | 1N3297 | 1N3297 | 1N3296RA |
| Hiersteller | GeneSiC Semiconductor | Microchip Technology | Solid State Inc. | Solid State Inc. |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 100A | 100A | 100A | 100A |
| Aktuell - Reverse Leakage @ Vr | 7 mA @ 1400 V | 50 µA @ 1400 V | 50 µA @ 1400 V | 50 µA @ 1200 V |
| Technologie | Standard, Reverse Polarity | Standard | Standard | Standard, Reverse Polarity |
| Voltage - DC Reverse (Vr) (Max) | 1400 V | 1400 V | 1400 V | 1200 V |
| Package protegéieren | Bulk | Bulk | Box | Box |
| Serie | - | - | - | - |
| Supplier Device Package | DO-205AA (DO-8) | DO-205AA (DO-8) | DO-8 | DO-8 |
| Package / Case | DO-205AA, DO-8, Stud | DO-205AA, DO-8, Stud | DO-205AA, DO-8, Stud | DO-205AA, DO-8, Stud |
| Basis Produktnummer | 1N3297AR | 1N3297 | - | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 100 A | 1.2 V @ 200 A | 1.2 V @ 200 A | 1.2 V @ 200 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Operatiounstemperatur - Junction | -40°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C |
| Mounting Type | Chassis, Stud Mount | Stud Mount | Stud Mount | Stud Mount |
| Capacitance @ Vr, F. | - | - | - | - |
Eroflueden 1N3297AR PDF DataDhusts an GeneSiC Semiconductor Dokumentatioun fir 1N3297AR - GeneSiC Semiconductor.
1N3305Solid State Inc.DO5 50 WATT ZENER DIODES
1N3298ARGeneral Semiconductor (Vishay)IGBT Module1N3297Microchip TechnologySTANDARD RECTIFIER
1N3299MicrosemiIGBT Module1N3298AMicrosemiIGBT Module1N3297Solid State Inc.DIODE GEN PURP 1.4KV 100A DO81N3305ASolid State Inc.DO5 50 WATT ZENER DIODES1N3296RASolid State Inc.DIODE GP REV 1.2KV 100A DO81N3296ARMicrochip TechnologySTANDARD RECTIFIER1N3299AMicrosemiIGBT Module1N3298RAMicrosemiIGBT Module1N3296RBMicrosemiIGBT Module1N3298MicrosemiIGBT Module1N3296RMicrochip TechnologySTANDARD RECTIFIER
1N3296ARPowerex Inc.DIODE GP REV 1.2KV 100A DO205AA1N3297ARPowerex Inc.DIODE GP REV 1.4KV 100A DO205AA1N3297ARMicrochip TechnologySTANDARD RECTIFIER1N3296RSolid State Inc.DIODE GP REV 1.2KV 100A DO8| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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