1N3296RA Tech Spezifikatioune
Solid State Inc. - 1N3296RA technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Solid State Inc. - 1N3296RA
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Solid State Inc. | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 200 A | |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | |
| Technologie | Standard, Reverse Polarity | |
| Supplier Device Package | DO-8 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-205AA, DO-8, Stud | |
| Package protegéieren | Box | |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 50 µA @ 1200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 100A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Solid State Inc. 1N3296RA.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N3296RA | 1N3296AR | 1N3296A | 1N3296A |
| Hiersteller | Solid State Inc. | GeneSiC Semiconductor | Solid State Inc. | Microchip Technology |
| Supplier Device Package | DO-8 | DO-205AA (DO-8) | DO-8 | DO-205AA (DO-8) |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | 1200 V | 1200 V | 1200 V |
| Serie | - | - | - | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 200 A | 1.5 V @ 100 A | 1.2 V @ 200 A | 1.1 V @ 200 A |
| Mounting Type | Stud Mount | Chassis, Stud Mount | Stud Mount | Stud Mount |
| Package / Case | DO-205AA, DO-8, Stud | DO-205AA, DO-8, Stud | DO-205AA, DO-8, Stud | DO-205AA, DO-8, Stud |
| Capacitance @ Vr, F. | - | - | - | - |
| Technologie | Standard, Reverse Polarity | Standard, Reverse Polarity | Standard | Standard |
| Package protegéieren | Box | Bulk | Box | Bulk |
| Aktuell - Reverse Leakage @ Vr | 50 µA @ 1200 V | 9 mA @ 1200 V | 50 µA @ 1200 V | 200 µA @ 1200 V |
| Operatiounstemperatur - Junction | -65°C ~ 200°C | -40°C ~ 200°C | -65°C ~ 200°C | -65°C ~ 200°C |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 100A | 100A | 100A | 150A |
1N3296ARGeneSiC SemiconductorDIODE GP REV 1.2KV 100A DO205AA1N3296ASolid State Inc.DIODE GEN PURP 1.2KV 100A DO8
1N3298ARGeneral Semiconductor (Vishay)IGBT Module1N3296AMicrochip TechnologySTANDARD RECTIFIER1N3297Solid State Inc.DIODE GEN PURP 1.4KV 100A DO8
1N3296ARPowerex Inc.DIODE GP REV 1.2KV 100A DO205AA1N3296ARMicrochip TechnologySTANDARD RECTIFIER
1N3296RBMicrosemiIGBT Module1N3297ARGeneSiC SemiconductorDIODE GP REV 1.4KV 100A DO205AA1N3296RMicrochip TechnologySTANDARD RECTIFIER1N3298AMicrosemiIGBT Module1N3296RSolid State Inc.DIODE GP REV 1.2KV 100A DO81N3296APowerex Inc.DIODE GP 1.2KV 100A DO205AA1N3297ARPowerex Inc.DIODE GP REV 1.4KV 100A DO205AA1N3297Microchip TechnologySTANDARD RECTIFIER1N3297ARMicrochip TechnologySTANDARD RECTIFIER1N3296AGeneSiC SemiconductorDIODE GP 1.2KV 100A DO205AA1N3298MicrosemiIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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