GKI03026 Tech Spezifikatioune
Sanken Electric USA Inc. - GKI03026 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Sanken Electric USA Inc. - GKI03026
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Sanken Electric USA Inc. | |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-DFN (5x6) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 68A, 10V | |
| Power Dissipation (Max) | 3.1W (Ta), 77W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 4010 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Sanken Electric USA Inc. GKI03026.
| Produktiounsattriff | |
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|---|---|---|---|---|
| Part Number | GKI03026 | GKI06259 | SI4850EY-T1 | GKI04048 |
| Hiersteller | Sanken Electric USA Inc. | Sanken Electric USA Inc. | Vishay Siliconix | Sanken Electric USA Inc. |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Entworf fir Source Voltage (Vdss) | 30 V | 60 V | 60 V | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4010 pF @ 15 V | 1050 pF @ 25 V | - | 2410 pF @ 25 V |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 68A, 10V | 21mOhm @ 12.5A, 10V | 22mOhm @ 6A, 10V | 5mOhm @ 35.4A, 10V |
| Power Dissipation (Max) | 3.1W (Ta), 77W (Tc) | 3.1W (Ta), 40W (Tc) | 1.7W (Ta) | 3.1W (Ta), 59W (Tc) |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | 2.5V @ 250µA | 3V @ 250µA | 2.5V @ 650µA |
| Supplier Device Package | 8-DFN (5x6) | 8-DFN (5x6) | 8-SOIC | 8-DFN (5x6) |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-SOIC (0.154", 3.90mm Width) | 8-PowerTDFN |
| FET Feature | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Ta) | 6A (Ta) | 6A (Ta) | 14A (Ta) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V | 16 nC @ 10 V | 27 nC @ 10 V | 35.3 nC @ 10 V |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 175°C (TJ) | 150°C (TJ) |
| Serie | - | - | TrenchFET® | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden GKI03026 PDF DataDhusts an Sanken Electric USA Inc. Dokumentatioun fir GKI03026 - Sanken Electric USA Inc..
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IPB010N06NATMA1Infineon TechnologiesMOSFET N-CH 60V 45A/180A TO263-7FQD12P10TFonsemiMOSFET P-CH 100V 9.4A TO252| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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