PMR290UNE,115 Tech Spezifikatioune
NXP USA Inc. - PMR290UNE,115 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NXP USA Inc. - PMR290UNE,115
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | NXP Semiconductors | |
Vgs (th) (Max) @ Id | 950mV @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SC-75 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 380mOhm @ 500mA, 4.5V | |
Power Dissipation (Max) | 250mW (Ta), 770mW (Tc) | |
Package / Case | SC-75, SOT-416 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 83 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 0.68 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 700mA (Ta) | |
Basis Produktnummer | PMR2 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NXP USA Inc. PMR290UNE,115.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | PMR290UNE,115 | PMR290XN,115 | PMR670UPE,115 | PMR280UN,115 |
Hiersteller | NXP USA Inc. | NXP USA Inc. | NXP USA Inc. | NXP USA Inc. |
Power Dissipation (Max) | 250mW (Ta), 770mW (Tc) | 530mW (Tc) | 250mW (Ta), 770mW (Tc) | 530mW (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 2.5V, 4.5V | 1.8V, 4.5V | 1.8V, 4.5V |
Supplier Device Package | SC-75 | SC-75 | SC-75 | SC-75 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 700mA (Ta) | 970mA (Tc) | 480mA (Ta) | 980mA (Tc) |
Vgs (Max) | ±8V | ±12V | ±8V | ±8V |
Vgs (th) (Max) @ Id | 950mV @ 250µA | 1.5V @ 250µA | 1.3V @ 250µA | 1V @ 250µA |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package / Case | SC-75, SOT-416 | SC-75, SOT-416 | SC-75, SOT-416 | SC-75, SOT-416 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 83 pF @ 10 V | 34 pF @ 20 V | 87 pF @ 10 V | 45 pF @ 20 V |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 380mOhm @ 500mA, 4.5V | 350mOhm @ 200mA, 4.5V | 850mOhm @ 400mA, 4.5V | 340mOhm @ 200mA, 4.5V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 0.68 nC @ 4.5 V | 0.72 nC @ 4.5 V | 1.14 nC @ 4.5 V | 0.89 nC @ 4.5 V |
FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
Basis Produktnummer | PMR2 | PMR2 | PMR6 | PMR2 |
Serie | - | TrenchMOS™ | - | TrenchMOS™ |
Eroflueden PMR290UNE,115 PDF DataDhusts an NXP USA Inc. Dokumentatioun fir PMR290UNE,115 - NXP USA Inc..
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.