PMR280UN,115 Tech Spezifikatioune
NXP USA Inc. - PMR280UN,115 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu NXP USA Inc. - PMR280UN,115
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | NXP Semiconductors | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SC-75 | |
| Serie | TrenchMOS™ | |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 200mA, 4.5V | |
| Power Dissipation (Max) | 530mW (Tc) | |
| Package / Case | SC-75, SOT-416 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 45 pF @ 20 V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.89 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 980mA (Tc) | |
| Basis Produktnummer | PMR2 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu NXP USA Inc. PMR280UN,115.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | PMR280UN,115 | PMR290UNE,115 | PMR290XN,115 | PMR400UN,115 |
| Hiersteller | NXP USA Inc. | NXP USA Inc. | NXP USA Inc. | NXP USA Inc. |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 950mV @ 250µA | 1.5V @ 250µA | 1V @ 250µA |
| Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 30 V |
| Serie | TrenchMOS™ | - | TrenchMOS™ | TrenchMOS™ |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Basis Produktnummer | PMR2 | PMR2 | PMR2 | PMR4 |
| Package / Case | SC-75, SOT-416 | SC-75, SOT-416 | SC-75, SOT-416 | SC-75, SOT-416 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Input Capacitance (Ciss) (Max) @ Vds | 45 pF @ 20 V | 83 pF @ 10 V | 34 pF @ 20 V | 43 pF @ 25 V |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 200mA, 4.5V | 380mOhm @ 500mA, 4.5V | 350mOhm @ 200mA, 4.5V | 480mOhm @ 200mA, 4.5V |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 0.89 nC @ 4.5 V | 0.68 nC @ 4.5 V | 0.72 nC @ 4.5 V | 0.89 nC @ 4.5 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 530mW (Tc) | 250mW (Ta), 770mW (Tc) | 530mW (Tc) | 530mW (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 980mA (Tc) | 700mA (Ta) | 970mA (Tc) | 800mA (Tc) |
| Vgs (Max) | ±8V | ±8V | ±12V | ±8V |
| Supplier Device Package | SC-75 | SC-75 | SC-75 | SC-75 |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.8V, 4.5V | 2.5V, 4.5V | 1.8V, 4.5V |
Eroflueden PMR280UN,115 PDF DataDhusts an NXP USA Inc. Dokumentatioun fir PMR280UN,115 - NXP USA Inc..
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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