SFU9214TU Tech Spezifikatioune
Fairchild Semiconductor - SFU9214TU technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - SFU9214TU
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I-PAK | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 4Ohm @ 770mA, 10V | |
Power Dissipation (Max) | 2.5W (Ta), 19W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 250 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.53A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor SFU9214TU.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SFU9214TU | SSR1N60BTM | FDMS8020 | IRFP4110PBF |
Hiersteller | Fairchild Semiconductor | onsemi | onsemi | Infineon Technologies |
Entworf fir Source Voltage (Vdss) | 250 V | 600 V | 30 V | 100 V |
Serie | - | - | PowerTrench® | HEXFET® |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 4.5V, 10V | 10V |
Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 2.5W (Ta), 19W (Tc) | 2.5W (Ta), 28W (Tc) | 2.5W (Ta), 65W (Tc) | 370W (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V | 7.7 nC @ 10 V | 61 nC @ 10 V | 210 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 25 V | 215 pF @ 25 V | 3800 pF @ 15 V | 9620 pF @ 50 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8-PowerTDFN | TO-247-3 |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 3V @ 250µA | 4V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.53A (Tc) | 900mA (Tc) | 26A (Ta), 42A (Tc) | 120A (Tc) |
Vgs (Max) | ±30V | ±30V | ±20V | ±20V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Supplier Device Package | I-PAK | TO-252AA | 8-PQFN (5x6) | TO-247AC |
Rds On (Max) @ Id, Vgs | 4Ohm @ 770mA, 10V | 12Ohm @ 450mA, 10V | 2.5mOhm @ 26A, 10V | 4.5mOhm @ 75A, 10V |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Through Hole |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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