RDD022N50TL Tech Spezifikatioune
Rohm Semiconductor - RDD022N50TL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RDD022N50TL
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 4.7V @ 1mA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | CPT3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 5.4Ohm @ 1A, 10V | |
| Power Dissipation (Max) | 20W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 168 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 6.7 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 500 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Tc) | |
| Basis Produktnummer | RDD022 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RDD022N50TL.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | RDD022N50TL | RDD023N50TL | RDD050N20TL | DMN61D8LQ-13 |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Diodes Incorporated |
| Basis Produktnummer | RDD022 | RDD023 | RDD050 | DMN61 |
| Power Dissipation (Max) | 20W (Tc) | 20W (Tc) | 20W (Tc) | 390mW (Ta) |
| Vgs (Max) | ±30V | ±20V | ±30V | ±12V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 4V, 10V | 10V | 3V, 5V |
| Rds On (Max) @ Id, Vgs | 5.4Ohm @ 1A, 10V | 5.4Ohm @ 1A, 10V | 720mOhm @ 2.5A, 10V | 1.8Ohm @ 150mA, 5V |
| Entworf fir Source Voltage (Vdss) | 500 V | 500 V | 200 V | 60 V |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-236-3, SC-59, SOT-23-3 |
| Gate Charge (Qg) (Max) @ Vgs | 6.7 nC @ 10 V | 11 nC @ 10 V | 9.3 nC @ 10 V | 0.74 nC @ 5 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Tc) | 2A (Tc) | 5A (Ta) | 470mA (Ta) |
| Supplier Device Package | CPT3 | CPT3 | CPT3 | SOT-23-3 |
| Serie | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds | 168 pF @ 25 V | 151 pF @ 25 V | 292 pF @ 10 V | 12.9 pF @ 12 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 4.7V @ 1mA | 2V @ 1mA | 4V @ 1mA | 2V @ 1mA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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