NDP7050 Tech Spezifikatioune
Fairchild Semiconductor - NDP7050 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - NDP7050
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 40A, 10V | |
| Power Dissipation (Max) | 150W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -65°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 50 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor NDP7050.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | NDP7050 | NDP7060 | NDP7060 | NDP7050 |
| Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | onsemi |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) | 75A (Tc) | 75A (Tc) | 75A (Tc) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 40A, 10V | 13mOhm @ 40A, 10V | 13mOhm @ 40A, 10V | 13mOhm @ 40A, 10V |
| Power Dissipation (Max) | 150W (Tc) | 150W (Tc) | 150W (Tc) | 150W (Tc) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V | 115 nC @ 10 V | 115 nC @ 10 V | 115 nC @ 10 V |
| Serie | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 50 V | 60 V | 60 V | 50 V |
| Operatioun Temperatur | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) |
| Package protegéieren | Tube | Tube | Bulk | Tube |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V | 3600 pF @ 25 V | 3600 pF @ 25 V | 3600 pF @ 25 V |
NDP6060L MOSFairchild (onsemi)NDP7060onsemiMOSFET N-CH 60V 75A TO220-3NDP6060 MOSFairchild (onsemi)NDP7051LNSNDP7052NSNDP6060BFSCNDP7060Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 7NDP7052LFairchild (onsemi)NDP7050onsemiMOSFET N-CH 50V 75A TO220-3NDP610BELFSCNDP705AENSNDP7051NSNDP6060LonsemiMOSFET N-CH 60V 48A TO220-3NDP606BFSCNDP7060 MOSNSNDP6060LFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 4NDP6060onsemiMOSFET N-CH 60V 48A TO220-3NDP605BLVBSEMI| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.