NDP6060 Tech Spezifikatioune
onsemi - NDP6060 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NDP6060
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 24A, 10V | |
| Power Dissipation (Max) | 100W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -65°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 48A (Tc) | |
| Basis Produktnummer | NDP606 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NDP6060.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | NDP6060 | NDP603AL | NDP6060L | NDP6060L |
| Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V | 1100 pF @ 15 V | 2000 pF @ 25 V | 2000 pF @ 25 V |
| Basis Produktnummer | NDP606 | - | - | NDP6060 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 48A (Tc) | 25A (Tc) | 48A (Tc) | 48A (Tc) |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 5V, 10V | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 24A, 10V | 22mOhm @ 25A, 10V | 20mOhm @ 24A, 10V | 20mOhm @ 24A, 10V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | 40 nC @ 10 V | 60 nC @ 5 V | 60 nC @ 5 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 100W (Tc) | 50W (Tc) | 100W (Tc) | 100W (Tc) |
| Entworf fir Source Voltage (Vdss) | 60 V | 30 V | 60 V | 60 V |
| Package protegéieren | Tube | Tube | Bulk | Tube |
| Operatioun Temperatur | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Serie | - | - | - | - |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 3V @ 250µA | 2V @ 250µA | 2V @ 250µA |
| Vgs (Max) | ±20V | ±20V | ±16V | ±16V |
Eroflueden NDP6060 PDF DataDhusts an onsemi Dokumentatioun fir NDP6060 - onsemi.
NDP603ALFairchild SemiconductorMOSFET N-CH 30V 25A TO220-3NDP6060L MOSFairchild (onsemi)
NDP605ANSNDP6060LFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 4NDP6050LNSNDP6060 MOSFairchild (onsemi)NDP606BFSCNDP6050 MOSNSNDP6060LonsemiMOSFET N-CH 60V 48A TO220-3NDP610BELFSCNDP603ALonsemiMOSFET N-CH 30V 25A TO220-3NDP605BLVBSEMINDP6051NSNDP6050NSNDP7050Fairchild SemiconductorMOSFET N-CH 50V 75A TO220-3NDP7050onsemiMOSFET N-CH 50V 75A TO220-3NDP6060BFSCNDP605BNS| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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