HUF76113SK8 Tech Spezifikatioune
Fairchild Semiconductor - HUF76113SK8 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - HUF76113SK8
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | US8 | |
Serie | UltraFET™ | |
Rds On (Max) @ Id, Vgs | 30mOhm @ 6.5A, 10V | |
Power Dissipation (Max) | 2.5W (Ta) | |
Package / Case | 8-VFSOP (0.091", 2.30mm Width) | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 585 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor HUF76113SK8.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | HUF76113SK8 | HUF76113T3ST | HUF76121D3S | HUF76113T3ST |
Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | Harris Corporation |
Package / Case | 8-VFSOP (0.091", 2.30mm Width) | TO-261-4, TO-261AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A (Ta) | 4.7A (Ta) | 20A (Tc) | - |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | - |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | - |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V | 20.5 nC @ 10 V | 30 nC @ 10 V | - |
Supplier Device Package | US8 | SOT-223-4 | TO-252-3 (DPAK) | - |
Input Capacitance (Ciss) (Max) @ Vds | 585 pF @ 25 V | 625 pF @ 25 V | 850 pF @ 25 V | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
Power Dissipation (Max) | 2.5W (Ta) | 1.1W (Ta) | 75W (Tc) | - |
Vgs (Max) | ±20V | ±20V | ±20V | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
Serie | UltraFET™ | - | - | * |
Package protegéieren | Bulk | Bulk | Bulk | Bulk |
FET Typ | N-Channel | N-Channel | N-Channel | - |
Rds On (Max) @ Id, Vgs | 30mOhm @ 6.5A, 10V | 31mOhm @ 4.7A, 10V | 23mOhm @ 20A, 10V | - |
FET Feature | - | - | - | - |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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