HUF76113DK8T Tech Spezifikatioune
Fairchild Semiconductor - HUF76113DK8T technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - HUF76113DK8T
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | US8 | |
| Serie | UltraFET® | |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 6A, 10V | |
| Power - Max | 2.5W (Ta) | |
| Package / Case | 8-VFSOP (0.091", 2.30mm Width) | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 605pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 19.2nC @ 10V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Ta) | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | HUF76113 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor HUF76113DK8T.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | HUF76113DK8T | HUF76107D3ST | HUF76107D3ST MOS | HUF76113D |
| Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | HARRIS | HARRIS |
| Input Capacitance (Ciss) (Max) @ Vds | 605pF @ 25V | 315 pF @ 25 V | - | - |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | - | - |
| Power - Max | 2.5W (Ta) | - | - | - |
| Supplier Device Package | US8 | TO-252, (D-Pak) | - | - |
| Serie | UltraFET® | UltraFET™ | - | - |
| Basis Produktnummer | HUF76113 | - | - | - |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 6A, 10V | 52mOhm @ 20A, 10V | - | - |
| FET Feature | Logic Level Gate | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 19.2nC @ 10V | 10.3 nC @ 10 V | - | - |
| Entworf fir Source Voltage (Vdss) | 30V | 30 V | - | - |
| Konfiguratioun | 2 N-Channel (Dual) | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Ta) | 20A (Tc) | - | - |
| Package / Case | 8-VFSOP (0.091", 2.30mm Width) | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | - |
| Package protegéieren | Bulk | Bulk | - | - |
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HUF76105DK8T136Intersil (Renesas Electronics Corporation)HUF76121D3ST MOSFairchild (onsemi)HUF76121D3SFairchild SemiconductorN-CHANNEL POWER MOSFETHUF76121P3Fairchild SemiconductorN-CHANNEL POWER MOSFETHUF76113SK8Fairchild SemiconductorN-CHANNEL POWER MOSFETHUF76113T3STFairchild SemiconductorN-CHANNEL POWER MOSFETHUF76107DFairchild (onsemi)
HUF76113DK8Cypress Semiconductor (Infineon Technologies)HUF76112SK8TFAIRCHILHUF76107D3S MOSFairchild (onsemi)HUF76113SK8TIntersil (Renesas Electronics Corporation)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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