HGTG18N120BN Tech Spezifikatioune
Fairchild Semiconductor - HGTG18N120BN technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - HGTG18N120BN
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 18A | |
| Test Condition | 960V, 18A, 3Ohm, 15V | |
| Td (on / off) @ 25 ° C | 23ns/170ns | |
| Energie schalten | 800µJ (on), 1.8mJ (off) | |
| Supplier Device Package | TO-247-3 | |
| Serie | - | |
| Power - Max | 390 W | |
| Package / Case | TO-247-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Type | Standard | |
| IGBT Type | NPT | |
| Gate Charge | 165 nC | |
| Aktuell - Sammler Pulséiert (Icm) | 165 A | |
| Aktuell - Sammler (Ic) (Max) | 54 A | |
| Basis Produktnummer | HGTG18 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor HGTG18N120BN.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | HGTG18N120BN | HGTG18N120BN | HGTG11N120CN | HGTG12N60A4 |
| Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Power - Max | 390 W | 390 W | 298 W | 167 W |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | 1200 V | 1200 V | 600 V |
| Serie | - | - | - | - |
| Package protegéieren | Bulk | Tube | Tube | Tube |
| Aktuell - Sammler (Ic) (Max) | 54 A | 54 A | 43 A | 54 A |
| Aktuell - Sammler Pulséiert (Icm) | 165 A | 165 A | 80 A | 96 A |
| Test Condition | 960V, 18A, 3Ohm, 15V | 960V, 18A, 3Ohm, 15V | 960V, 11A, 10Ohm, 15V | 390V, 12A, 10Ohm, 15V |
| Energie schalten | 800µJ (on), 1.8mJ (off) | 800µJ (on), 1.8mJ (off) | 400µJ (on), 1.3mJ (off) | 55µJ (on), 50µJ (off) |
| Supplier Device Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Gate Charge | 165 nC | 165 nC | 100 nC | 78 nC |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 18A | 2.7V @ 15V, 18A | 2.4V @ 15V, 11A | 2.7V @ 15V, 12A |
| IGBT Type | NPT | NPT | NPT | - |
| Td (on / off) @ 25 ° C | 23ns/170ns | 23ns/170ns | 23ns/180ns | 17ns/96ns |
| Basis Produktnummer | HGTG18 | HGTG18 | HGTG11N120 | HGTG12N60 |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Input Type | Standard | Standard | Standard | Standard |
HGTG18N120BNonsemiIGBT 1200V 54A 390W TO247HGTG20N120C3DLINTERSI
HGTG20N50E1DFairchild (onsemi)HGTG11N120CNonsemiIGBT 1200V 43A 298W TO247HGTG12N60A4onsemiIGBT 600V 54A 167W TO247HGTG12N60B3DITSHGTG20N50C1DHarris Corporation26A, 500V, N-CHANNEL IGBTHGTG20N120CNDFairchild (onsemi)HGTG11N120CNDFairchild Semiconductor1200V, NPT IGBTHGTG12N60A4Fairchild SemiconductorN-CHANNEL IGBTHGTG11N120CNFairchild SemiconductorN-CHANNEL IGBTHGTG20N60A4Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOHGTG11N120CNDonsemiIGBT NPT 1200V 43A TO247-3HGTG18N120BNDonsemiIGBT 1200V 54A 390W TO247HGTG18N120Fairchild (onsemi)HGTG20N60A4onsemiIGBT 600V 70A TO247-3HGTG12N60A4DonsemiIGBT 600V 54A 167W TO247HGTG20N60Fairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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