HGTG20N60A4 Tech Spezifikatioune
onsemi - HGTG20N60A4 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - HGTG20N60A4
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A | |
| Test Condition | 390V, 20A, 3Ohm, 15V | |
| Td (on / off) @ 25 ° C | 15ns/73ns | |
| Energie schalten | 105µJ (on), 150µJ (off) | |
| Supplier Device Package | TO-247-3 | |
| Serie | - | |
| Power - Max | 290 W | |
| Package / Case | TO-247-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Type | Standard | |
| IGBT Type | - | |
| Gate Charge | 142 nC | |
| Aktuell - Sammler Pulséiert (Icm) | 280 A | |
| Aktuell - Sammler (Ic) (Max) | 70 A | |
| Basis Produktnummer | HGTG20 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi HGTG20N60A4.
| Produktiounsattriff |  |
|
 |
|
|---|---|---|---|---|
| Part Number | HGTG20N60A4 | HGTG24N60D1 | HGTG27N120BN | HGTG18N120BN |
| Hiersteller | onsemi | Harris Corporation | onsemi | onsemi |
| Energie schalten | 105µJ (on), 150µJ (off) | - | 2.2mJ (on), 2.3mJ (off) | 800µJ (on), 1.8mJ (off) |
| Test Condition | 390V, 20A, 3Ohm, 15V | - | 960V, 27A, 3Ohm, 15V | 960V, 18A, 3Ohm, 15V |
| Input Type | Standard | Standard | Standard | Standard |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Basis Produktnummer | HGTG20 | - | HGTG27 | HGTG18 |
| Gate Charge | 142 nC | 155 nC | 270 nC | 165 nC |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | 600 V | 1200 V | 1200 V |
| Serie | - | - | - | - |
| Aktuell - Sammler Pulséiert (Icm) | 280 A | 96 A | 216 A | 165 A |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A | 2.3V @ 15V, 24A | 2.7V @ 15V, 27A | 2.7V @ 15V, 18A |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Td (on / off) @ 25 ° C | 15ns/73ns | - | 24ns/195ns | 23ns/170ns |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Power - Max | 290 W | 125 W | 500 W | 390 W |
| IGBT Type | - | - | NPT | NPT |
| Aktuell - Sammler (Ic) (Max) | 70 A | 40 A | 72 A | 54 A |
| Supplier Device Package | TO-247-3 | TO-247 | TO-247-3 | TO-247-3 |
| Package protegéieren | Tube | Bulk | Tube | Tube |
Eroflueden HGTG20N60A4 PDF DataDhusts an onsemi Dokumentatioun fir HGTG20N60A4 - onsemi.
HGTG24N60D1Harris CorporationUFS SERIES N-CHANNEL IGBT
HGTG20N50E1DFairchild (onsemi)HGTG27N120BNonsemiIGBT NPT 1200V 72A TO247-3HGTG18N120BNonsemiIGBT 1200V 54A 390W TO247HGTG18N120BNDonsemiIGBT 1200V 54A 390W TO247HGTG20N60B3Harris CorporationN-CHANNEL IGBTHGTG20N60B3DonsemiIGBT 600V 40A 165W TO247HGTG20N120CNDFairchild (onsemi)HGTG20N120C3DLINTERSIHGTG20N60C3Fairchild (onsemi)HGTG18N120BNFairchild SemiconductorIGBT, 54A, 1200V, N-CHANNEL, TO-HGTG20N60Fairchild (onsemi)HGTG20N50C1DHarris Corporation26A, 500V, N-CHANNEL IGBTHGTG20N60A4DonsemiIGBT 600V 70A 290W TO247HGTG24N60D1DHarris CorporationUFS SERIES N-CHANNEL IGBTHGTG20N60A4Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOHGTG27N120BNFairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOHGTG20N60B3onsemiIGBT 600V 40A 165W TO247| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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