HGT1S2N120CN Tech Spezifikatioune
Fairchild Semiconductor - HGT1S2N120CN technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - HGT1S2N120CN
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Vce (on) (Max) @ Vge, Ic | 2.4V @ 15V, 2.6A | |
| Test Condition | 960V, 2.6A, 51Ohm, 15V | |
| Td (on / off) @ 25 ° C | 25ns/205ns | |
| Energie schalten | 96µJ (on), 355µJ (off) | |
| Supplier Device Package | TO-262 | |
| Serie | - | |
| Power - Max | 104 W |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Type | Standard | |
| IGBT Type | NPT | |
| Gate Charge | 30 nC | |
| Aktuell - Sammler Pulséiert (Icm) | 20 A | |
| Aktuell - Sammler (Ic) (Max) | 13 A |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor HGT1S2N120CN.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | HGT1S2N120CN | HGT1S3N60A4DS9A | HGT1S20N60A4S9A | HGT1S20N36G3VLS |
| Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | onsemi | Fairchild Semiconductor |
| Supplier Device Package | TO-262 | D2PAK (TO-263) | D²PAK (TO-263) | TO-263AB |
| Input Type | Standard | Standard | Standard | Logic |
| Energie schalten | 96µJ (on), 355µJ (off) | 37µJ (on), 25µJ (off) | 105µJ (on), 150µJ (off) | - |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Tube | Tube | Tube | Bulk |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | 600 V | 600 V | 415 V |
| Vce (on) (Max) @ Vge, Ic | 2.4V @ 15V, 2.6A | 2.7V @ 15V, 3A | 2.7V @ 15V, 20A | 1.9V @ 5V, 20A |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Aktuell - Sammler Pulséiert (Icm) | 20 A | 40 A | 280 A | - |
| IGBT Type | NPT | - | - | - |
| Serie | - | - | - | - |
| Power - Max | 104 W | 70 W | 290 W | 150 W |
| Aktuell - Sammler (Ic) (Max) | 13 A | 17 A | 70 A | 37.7 A |
| Td (on / off) @ 25 ° C | 25ns/205ns | 6ns/73ns | 15ns/73ns | -/15µs |
| Test Condition | 960V, 2.6A, 51Ohm, 15V | 390V, 3A, 50Ohm, 15V | 390V, 20A, 3Ohm, 15V | 300V, 10A, 25Ohm, 5V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 175°C (TJ) |
| Gate Charge | 30 nC | 21 nC | 142 nC | 28.7 nC |
HGT1S5N120CNDSFairchild (onsemi)HGT1S3N60A4DS9AFairchild SemiconductorN-CHANNEL IGBTHGT1S14N40G3VLSFairchild (onsemi)HGT1S14N41G3VLSR4874Fairchild (onsemi)HGT1S20N60A4S9AonsemiIGBT 600V 70A 290W TO263ABHGT1S14N41G3VLS9AFairchild (onsemi)HGT1S20N60C3SFairchild (onsemi)HGT1S20N36G3VLSFairchild SemiconductorIGBT, 37.7A, 355V, N-CHANNELHGT1S3N60A4DS9AonsemiIGBT 600V 17A 70W D2PAKHGT1S7N60A4DFairchild (onsemi)HGT1S14N40F3VLSFSCHGT1S20N60C3RHarris Corporation40A, 600V, RUGGED N-CHANNEL IGBT
HGT1S2N120CNonsemiIGBT 1200V 13A 104W I2PAKHGT1S20N36G3VLSR4737INTERSIL/FAIRCHILDHGT1S3N60A4DSFairchild (onsemi)HGT1S7N60A4DSonsemiIGBT 600V 34A 125W TO263AB
HGT1S3N60C3DS9AIntersil (Renesas Electronics Corporation)HGT1S3N60B3DSHarris Corporation7A, 600V, UFS N-CHANNEL IGBT| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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