HGT1S2N120CN Tech Spezifikatioune
onsemi - HGT1S2N120CN technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - HGT1S2N120CN
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
Vce (on) (Max) @ Vge, Ic | 2.4V @ 15V, 2.6A | |
Test Condition | 960V, 2.6A, 51Ohm, 15V | |
Td (on / off) @ 25 ° C | 25ns/205ns | |
Energie schalten | 96µJ (on), 355µJ (off) | |
Supplier Device Package | TO-262 | |
Serie | - | |
Power - Max | 104 W | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tube | |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Type | Standard | |
IGBT Type | NPT | |
Gate Charge | 30 nC | |
Aktuell - Sammler Pulséiert (Icm) | 20 A | |
Aktuell - Sammler (Ic) (Max) | 13 A | |
Basis Produktnummer | HGT1S2N120 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi HGT1S2N120CN.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | HGT1S2N120CN | HGT1S7N60A4DS | HGT1S20N60C3R | HGT1S3N60A4DS9A |
Hiersteller | onsemi | Fairchild Semiconductor | Harris Corporation | Fairchild Semiconductor |
Test Condition | 960V, 2.6A, 51Ohm, 15V | 390V, 7A, 25Ohm, 15V | - | 390V, 3A, 50Ohm, 15V |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type | Through Hole | Surface Mount | Through Hole | Surface Mount |
Supplier Device Package | TO-262 | D2PAK (TO-263) | I2PAK (TO-262) | D2PAK (TO-263) |
Aktuell - Sammler Pulséiert (Icm) | 20 A | 56 A | 80 A | 40 A |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | 600 V | 600 V | 600 V |
Power - Max | 104 W | 125 W | 164 W | 70 W |
Serie | - | - | - | - |
Vce (on) (Max) @ Vge, Ic | 2.4V @ 15V, 2.6A | 2.7V @ 15V, 7A | 2.2V @ 15V, 20A | 2.7V @ 15V, 3A |
Aktuell - Sammler (Ic) (Max) | 13 A | 34 A | 40 A | 17 A |
Input Type | Standard | Standard | Standard | Standard |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Td (on / off) @ 25 ° C | 25ns/205ns | 11ns/100ns | - | 6ns/73ns |
Energie schalten | 96µJ (on), 355µJ (off) | 55µJ (on), 60µJ (off) | - | 37µJ (on), 25µJ (off) |
IGBT Type | NPT | - | - | - |
Basis Produktnummer | HGT1S2N120 | - | - | - |
Gate Charge | 30 nC | 37 nC | 116 nC | 21 nC |
Package protegéieren | Tube | Tube | Bulk | Tube |
Eroflueden HGT1S2N120CN PDF DataDhusts an onsemi Dokumentatioun fir HGT1S2N120CN - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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