FQPF3N50C Tech Spezifikatioune
onsemi - FQPF3N50C technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQPF3N50C
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220F-3 | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.5A, 10V | |
Power Dissipation (Max) | 25W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Tc) | |
Basis Produktnummer | FQPF3 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQPF3N50C.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQPF3N50C | FQPF34N20 | FQPF3N90 | FQPF3N25 |
Hiersteller | onsemi | Fairchild Semiconductor | onsemi | onsemi |
FET Feature | - | - | - | - |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Package protegéieren | Tube | Tube | Tube | Tube |
Supplier Device Package | TO-220F-3 | TO-220F-3 | TO-220F-3 | TO-220F-3 |
Power Dissipation (Max) | 25W (Tc) | 55W (Tc) | 43W (Tc) | 27W (Tc) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.5A, 10V | 75mOhm @ 8.75A, 10V | 4.25Ohm @ 1.05A, 10V | 2.2Ohm @ 1.15A, 10V |
Entworf fir Source Voltage (Vdss) | 500 V | 200 V | 900 V | 250 V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | QFET® | QFET® | QFET® | QFET® |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3A (Tc) | 17.5A (Tc) | 2.1A (Tc) | 2.3A (Tc) |
Basis Produktnummer | FQPF3 | - | FQPF3 | FQPF3 |
Input Capacitance (Ciss) (Max) @ Vds | 365 pF @ 25 V | 3100 pF @ 25 V | 910 pF @ 25 V | 170 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | 78 nC @ 10 V | 26 nC @ 10 V | 5.2 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden FQPF3N50C PDF DataDhusts an onsemi Dokumentatioun fir FQPF3N50C - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.