FQP45N15V2 Tech Spezifikatioune
Fairchild Semiconductor - FQP45N15V2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FQP45N15V2
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | QFET® | |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 22.5A, 10V | |
| Power Dissipation (Max) | 220W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 3030 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 150 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 45A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FQP45N15V2.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | FQP45N15V2 | FQP47P06 | FQP4N20 | FQP4N20L |
| Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | onsemi |
| Package protegéieren | Bulk | Tube | Tube | Tube |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 5V, 10V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Input Capacitance (Ciss) (Max) @ Vds | 3030 pF @ 25 V | 3600 pF @ 25 V | 220 pF @ 25 V | 310 pF @ 25 V |
| FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 220W (Tc) | 160W (Tc) | 45W (Tc) | 45W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V | 110 nC @ 10 V | 6.5 nC @ 10 V | 5.2 nC @ 5 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 45A (Tc) | 47A (Tc) | 3.6A (Tc) | 3.8A (Tc) |
| Vgs (Max) | ±30V | ±25V | ±30V | ±20V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 22.5A, 10V | 26mOhm @ 23.5A, 10V | 1.4Ohm @ 1.8A, 10V | 1.35Ohm @ 1.9A, 10V |
| Entworf fir Source Voltage (Vdss) | 150 V | 60 V | 200 V | 200 V |
| Serie | QFET® | QFET® | QFET® | QFET® |
FQP45N03LMFairchild (onsemi)FQP47P06onsemiMOSFET P-CH 60V 47A TO220-3FQP4N20Fairchild SemiconductorMOSFET N-CH 200V 3.6A TO220-3FQP4N20LonsemiMOSFET N-CH 200V 3.8A TO220-3FQP44N10Fairchild SemiconductorPOWER MOSFET, N-CHANNEL, QFET, 1FQP47P06 MOSFairchild (onsemi)FQP45N10Fairchild (onsemi)FQP47N06FSCFQP45N03LFairchild (onsemi)FQP45N03Fairchild (onsemi)FQP44N10F MOSFairchild (onsemi)FQP44N10onsemiMOSFET N-CH 100V 43.5A TO220-3FQP4N20LFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 3FQP44N10 MOSFairchild (onsemi)FQP45N15V2onsemiMOSFET N-CH 150V 45A TO220-3FQP45N03L MOSFairchild (onsemi)FQP4N20onsemiMOSFET N-CH 200V 3.6A TO220-3FQP46N15onsemiMOSFET N-CH 150V 45.6A TO220-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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