FQP44N10 Tech Spezifikatioune
Fairchild Semiconductor - FQP44N10 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FQP44N10
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±25V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | QFET® | |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 21.75A, 10V | |
| Power Dissipation (Max) | 146W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 43.5A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FQP44N10.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | FQP44N10 | FQP3P50 | FQP44N08 | FQP44N10 |
| Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | onsemi |
| Entworf fir Source Voltage (Vdss) | 100 V | 500 V | 80 V | 100 V |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V | 660 pF @ 25 V | 1430 pF @ 25 V | 1800 pF @ 25 V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 21.75A, 10V | 4.9Ohm @ 1.35A, 10V | 34mOhm @ 22A, 10V | 39mOhm @ 21.75A, 10V |
| Power Dissipation (Max) | 146W (Tc) | 85W (Tc) | 127W (Tc) | 146W (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Vgs (Max) | ±25V | ±30V | ±25V | ±25V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V | 23 nC @ 10 V | 50 nC @ 10 V | 62 nC @ 10 V |
| Package protegéieren | Bulk | Tube | Tube | Tube |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Serie | QFET® | QFET® | QFET® | QFET® |
| FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
| FET Feature | - | - | - | - |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 43.5A (Tc) | 2.7A (Tc) | 44A (Tc) | 43.5A (Tc) |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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