FQP16N15 Tech Spezifikatioune
Fairchild Semiconductor - FQP16N15 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FQP16N15
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±25V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | QFET® | |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 8.2A, 10V | |
| Power Dissipation (Max) | 108W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 150 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16.4A (Tc) |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | |
| Erreecht Status | |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FQP16N15.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FQP16N15 | FQP16N25 | FQP16N25C | FQP17N08 |
| Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Serie | QFET® | QFET® | QFET® | QFET® |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 150 V | 250 V | 250 V | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | 35 nC @ 10 V | 53.5 nC @ 10 V | 15 nC @ 10 V |
| Vgs (Max) | ±25V | ±30V | ±30V | ±25V |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 8.2A, 10V | 230mOhm @ 8A, 10V | 270mOhm @ 7.8A, 10V | 115mOhm @ 8.25A, 10V |
| Power Dissipation (Max) | 108W (Tc) | 142W (Tc) | 139W (Tc) | 65W (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 25 V | 1200 pF @ 25 V | 1080 pF @ 25 V | 450 pF @ 25 V |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16.4A (Tc) | 16A (Tc) | 15.6A (Tc) | 16.5A (Tc) |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Feature | - | - | - | - |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
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FQP16N25C-F105onsemiFQP16N25 - POWER FIELD-EFFECT TRFQP14N30Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 1FQP16N25Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 1FQP14N15onsemiMOSFET N-CH 150V 14.4A TO220-3FQP16N25CFairchild SemiconductorMOSFET N-CH 250V 15.6A TO220-3FQP16N15onsemiMOSFET N-CH 150V 16.4A TO220-3FQP16N25C-F105Fairchild SemiconductorFQP16N25 - POWER FIELD-EFFECT TRFQP15P12onsemiMOSFET P-CH 120V 15A TO220-3FQP17N08Fairchild SemiconductorMOSFET N-CH 80V 16.5A TO220-3FQP16N15 MOSFairchild (onsemi)FQP15N60CFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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