FQP16N25 Tech Spezifikatioune
onsemi - FQP16N25 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQP16N25
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 230mOhm @ 8A, 10V | |
Power Dissipation (Max) | 142W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 250 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Tc) | |
Basis Produktnummer | FQP16 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | Not Applicable |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQP16N25.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQP16N25 | FQP16N15 | FQP15P12 | FQP16N25C |
Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
Power Dissipation (Max) | 142W (Tc) | 108W (Tc) | 100W (Tc) | 139W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
Package protegéieren | Tube | Tube | Bulk | Tube |
Vgs (Max) | ±30V | ±25V | ±30V | ±30V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V | 910 pF @ 25 V | 1100 pF @ 25 V | 1080 pF @ 25 V |
Basis Produktnummer | FQP16 | - | - | FQP1 |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Rds On (Max) @ Id, Vgs | 230mOhm @ 8A, 10V | 160mOhm @ 8.2A, 10V | 200mOhm @ 7.5A, 10V | 270mOhm @ 7.8A, 10V |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 250 V | 150 V | 120 V | 250 V |
Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Tc) | 16.4A (Tc) | 15A (Tc) | 15.6A (Tc) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Serie | QFET® | QFET® | QFET® | QFET® |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | 30 nC @ 10 V | 38 nC @ 10 V | 53.5 nC @ 10 V |
Eroflueden FQP16N25 PDF DataDhusts an onsemi Dokumentatioun fir FQP16N25 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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