FGH50N6S2D Tech Spezifikatioune
Fairchild Semiconductor - FGH50N6S2D technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FGH50N6S2D
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 30A | |
| Test Condition | 390V, 30A, 3Ohm, 15V | |
| Td (on / off) @ 25 ° C | 13ns/55ns | |
| Energie schalten | 260µJ (on), 250µJ (off) | |
| Supplier Device Package | TO-247 | |
| Serie | - | |
| Reverse Recovery Time (trr) | 55 ns | |
| Power - Max | 463 W |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-247-3 | |
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Type | Standard | |
| IGBT Type | - | |
| Gate Charge | 70 nC | |
| Aktuell - Sammler Pulséiert (Icm) | 240 A | |
| Aktuell - Sammler (Ic) (Max) | 75 A |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FGH50N6S2D.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FGH50N6S2D | FGH50T65UPD | FGH60N60SFTU | FGH50N6S2 |
| Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
| Package protegéieren | Bulk | Tube | Tube | Tube |
| IGBT Type | - | Trench Field Stop | Field Stop | - |
| Serie | - | - | - | - |
| Supplier Device Package | TO-247 | TO-247-3 | TO-247-3 | TO-247-3 |
| Td (on / off) @ 25 ° C | 13ns/55ns | 32ns/160ns | 22ns/134ns | 13ns/55ns |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Power - Max | 463 W | 340 W | 378 W | 463 W |
| Energie schalten | 260µJ (on), 250µJ (off) | 2.7mJ (on), 740µJ (off) | 1.79mJ (on), 670µJ (off) | 260µJ (on), 250µJ (off) |
| Reverse Recovery Time (trr) | 55 ns | 53 ns | - | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Input Type | Standard | Standard | Standard | Standard |
| Aktuell - Sammler Pulséiert (Icm) | 240 A | 150 A | 180 A | 240 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | 650 V | 600 V | 600 V |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 30A | 2.3V @ 15V, 50A | 2.9V @ 15V, 60A | 2.7V @ 15V, 30A |
| Aktuell - Sammler (Ic) (Max) | 75 A | 100 A | 120 A | 75 A |
| Test Condition | 390V, 30A, 3Ohm, 15V | 400V, 50A, 6Ohm, 15V | 400V, 60A, 5Ohm, 15V | 390V, 30A, 3Ohm, 15V |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Gate Charge | 70 nC | 230 nC | 198 nC | 70 nC |
FGH40T70SHDFairchild (onsemi)FGH50T65UPDonsemiIGBT TRENCH/FS 650V 100A TO247-3FGH60N60SFTUonsemiIGBT FIELD STOP 600V 120A TO247FGH60N60FDSFGH50N6S2onsemiIGBT 600V 75A 463W TO247FGH50N6S2Fairchild SemiconductorN-CHANNEL IGBTFGH60N60SFDFairchild (onsemi)FGH40T65UPDonsemiIGBT TRENCH/FS 650V 80A TO247-3FGH60N60SFTUFairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOFGH60N60SFFairchild (onsemi)FGH50T65UPDFairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOFGH50N3onsemiIGBT PT 300V 75A TO247-3FGH60N60SFDTUonsemiIGBT FIELD STOP 600V 120A TO247FGH47N60FAMI Semiconductor/onsemiFGH50N6S2DonsemiIGBT 600V 75A TO247-3FGH50N3Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOFGH40T65SQD-F155onsemiIGBT TRENCH/FS 650V 80A TO247-3FGH50T65SQD-F155onsemiIGBT TRENCH/FS 650V 100A TO247-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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