FGH50N6S2 Tech Spezifikatioune
onsemi - FGH50N6S2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FGH50N6S2
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 30A | |
| Test Condition | 390V, 30A, 3Ohm, 15V | |
| Td (on / off) @ 25 ° C | 13ns/55ns | |
| Energie schalten | 260µJ (on), 250µJ (off) | |
| Supplier Device Package | TO-247-3 | |
| Serie | - | |
| Power - Max | 463 W | |
| Package / Case | TO-247-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Type | Standard | |
| IGBT Type | - | |
| Gate Charge | 70 nC | |
| Aktuell - Sammler Pulséiert (Icm) | 240 A | |
| Aktuell - Sammler (Ic) (Max) | 75 A | |
| Basis Produktnummer | FGH50 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FGH50N6S2.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | FGH50N6S2 | FGH50N6S2 | FGH50N3 | FGH50N6S2D |
| Hiersteller | onsemi | Fairchild Semiconductor | onsemi | Fairchild Semiconductor |
| Aktuell - Sammler (Ic) (Max) | 75 A | 75 A | 75 A | 75 A |
| IGBT Type | - | - | PT | - |
| Td (on / off) @ 25 ° C | 13ns/55ns | 13ns/55ns | 20ns/135ns | 13ns/55ns |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 30A | 2.7V @ 15V, 30A | 1.4V @ 15V, 30A | 2.7V @ 15V, 30A |
| Basis Produktnummer | FGH50 | - | FGH50 | - |
| Package protegéieren | Tube | Tube | Tube | Bulk |
| Aktuell - Sammler Pulséiert (Icm) | 240 A | 240 A | 240 A | 240 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | 600 V | 300 V | 600 V |
| Test Condition | 390V, 30A, 3Ohm, 15V | 390V, 30A, 3Ohm, 15V | 180V, 30A, 5Ohm, 15V | 390V, 30A, 3Ohm, 15V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Energie schalten | 260µJ (on), 250µJ (off) | 260µJ (on), 250µJ (off) | 130µJ (on), 92µJ (off) | 260µJ (on), 250µJ (off) |
| Serie | - | - | - | - |
| Input Type | Standard | Standard | Standard | Standard |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Power - Max | 463 W | 463 W | 463 W | 463 W |
| Gate Charge | 70 nC | 70 nC | 180 nC | 70 nC |
| Supplier Device Package | TO-247-3 | TO-247 | TO-247-3 | TO-247 |
Eroflueden FGH50N6S2 PDF DataDhusts an onsemi Dokumentatioun fir FGH50N6S2 - onsemi.
FGH50N6S2Fairchild SemiconductorN-CHANNEL IGBTFGH40T65SPDFairchild (onsemi)FGH47N60FAMI Semiconductor/onsemiFGH60N60SFFairchild (onsemi)FGH50N3onsemiIGBT PT 300V 75A TO247-3FGH50N6S2DFairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOFGH50T65SQD-F155onsemiIGBT TRENCH/FS 650V 100A TO247-3FGH60N60SFDFairchild (onsemi)FGH40T65SQD-F155onsemiIGBT TRENCH/FS 650V 80A TO247-3FGH50N6S2DonsemiIGBT 600V 75A TO247-3FGH40T70SHDFairchild (onsemi)FGH40T65SQDAMI Semiconductor/onsemiFGH60N60FDSFGH40T65UPDonsemiIGBT TRENCH/FS 650V 80A TO247-3FGH50N3Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOFGH50T65UPDFairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOFGH50T65UPDonsemiIGBT TRENCH/FS 650V 100A TO247-3FGH40T65SPD-F085onsemiIGBT NPT 650V 80A TO247-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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