FDPF5N50NZU Tech Spezifikatioune
Fairchild Semiconductor - FDPF5N50NZU technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDPF5N50NZU
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±25V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220F-3 | |
| Serie | UniFET-II™ | |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.95A, 10V | |
| Power Dissipation (Max) | 30W (Tc) | |
| Package / Case | TO-220-3 Full Pack | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 485 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 500 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.9A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDPF5N50NZU.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | FDPF5N50NZU | FDPF5N50UT | FDPF5N50FT | FDPF5N50UT |
| Hiersteller | Fairchild Semiconductor | onsemi | onsemi | Fairchild Semiconductor |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.95A, 10V | 2Ohm @ 2A, 10V | 1.55Ohm @ 2.25A, 10V | 2Ohm @ 2A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 485 pF @ 25 V | 650 pF @ 25 V | 700 pF @ 25 V | 650 pF @ 25 V |
| Vgs (Max) | ±25V | ±30V | ±30V | ±30V |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.9A (Tc) | 4A (Tc) | 4.5A (Tc) | 4A (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Serie | UniFET-II™ | FRFET® | UniFET™ | FRFET® |
| Supplier Device Package | TO-220F-3 | TO-220F-3 | TO-220F-3 | TO-220F-3 |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Power Dissipation (Max) | 30W (Tc) | 28W (Tc) | 28W (Tc) | 28W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | 15 nC @ 10 V | 8 nC @ 10 V | 15 nC @ 10 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package protegéieren | Bulk | Tube | Tube | Bulk |
| Entworf fir Source Voltage (Vdss) | 500 V | 500 V | 500 V | 500 V |
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FDPF5N50NZFTAMI Semiconductor/onsemiFDPF5N50NZUonsemiMOSFET N-CH 500V 3.9A TO220FFDPF55N06Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 5FDPF5N50NNZNOVFDPF5N50TFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 5FDPF5N50NZFonsemiPOWER FIELD-EFFECT TRANSISTOR, 4| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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