FDPF5N50NZU Tech Spezifikatioune
onsemi - FDPF5N50NZU technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDPF5N50NZU
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±25V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220F-3 | |
| Serie | UniFET-II™ | |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.95A, 10V | |
| Power Dissipation (Max) | 30W (Tc) | |
| Package / Case | TO-220-3 Full Pack | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 485 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 500 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.9A (Tc) | |
| Basis Produktnummer | FDPF5 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDPF5N50NZU.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FDPF5N50NZU | FDPF5N50NZ | FDPF5N50NZ | FDPF5N50NZU |
| Hiersteller | onsemi | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | - | 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.9A (Tc) | 4.5A (Tc) | - | 3.9A (Tc) |
| Serie | UniFET-II™ | UniFET-II™ | * | UniFET-II™ |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | 12 nC @ 10 V | - | 12 nC @ 10 V |
| Supplier Device Package | TO-220F-3 | TO-220F-3 | - | TO-220F-3 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) |
| Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | - | 5V @ 250µA |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | - | TO-220-3 Full Pack |
| Input Capacitance (Ciss) (Max) @ Vds | 485 pF @ 25 V | 440 pF @ 25 V | - | 485 pF @ 25 V |
| Vgs (Max) | ±25V | ±25V | - | ±25V |
| Entworf fir Source Voltage (Vdss) | 500 V | 500 V | - | 500 V |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.95A, 10V | 1.5Ohm @ 2.25A, 10V | - | 2Ohm @ 1.95A, 10V |
| Power Dissipation (Max) | 30W (Tc) | 30W (Tc) | - | 30W (Tc) |
| Mounting Type | Through Hole | Through Hole | - | Through Hole |
| Basis Produktnummer | FDPF5 | FDPF5 | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
| Package protegéieren | Tube | Tube | Bulk | Bulk |
| FET Typ | N-Channel | N-Channel | - | N-Channel |
Eroflueden FDPF5N50NZU PDF DataDhusts an onsemi Dokumentatioun fir FDPF5N50NZU - onsemi.
FDPF5N50NZonsemiMOSFET N-CH 500V 4.5A TO220FFDPF5N50NZFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 4
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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