FDP42AN15A0 Tech Spezifikatioune
Fairchild Semiconductor - FDP42AN15A0 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDP42AN15A0
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 12A, 10V | |
| Power Dissipation (Max) | 150W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
| Entworf fir Source Voltage (Vdss) | 150 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Ta), 35A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDP42AN15A0.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | FDP42AN15A0 | FDP51N25 | FDP39N20 | FDP52N20 |
| Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
| Entworf fir Source Voltage (Vdss) | 150 V | 250 V | 200 V | 200 V |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Vgs (Max) | ±20V | ±30V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 25 V | 3410 pF @ 25 V | 2130 pF @ 25 V | 2900 pF @ 25 V |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | 70 nC @ 10 V | 49 nC @ 10 V | 63 nC @ 10 V |
| Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 10V | 10V | 10V |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Power Dissipation (Max) | 150W (Tc) | 320W (Tc) | 251W (Tc) | 357W (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package protegéieren | Bulk | Tube | Tube | Tube |
| Serie | PowerTrench® | UniFET™ | UniFET™ | UniFET™ |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 12A, 10V | 60mOhm @ 25.5A, 10V | 66mOhm @ 19.5A, 10V | 49mOhm @ 26A, 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Ta), 35A (Tc) | 51A (Tc) | 39A (Tc) | 52A (Tc) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FDP51N25onsemiMOSFET N-CH 250V 51A TO220-3
FDP3682 MOSFairchild (onsemi)FDP42NA15Fairchild (onsemi)FDP39N20onsemiMOSFET N-CH 200V 39A TO220-3FDP52N20onsemiMOSFET N-CH 200V 52A TO220-3FDP46N30Fairchild Semiconductor46A, 300V, 0.079OHM, N-CHANNEL MFDP4020PFDP3N50NZFairchild (onsemi)FDP42AN15A0onsemiMOSFET N-CH 150V 5A/35A TO220-3FDP39N20 MOSFairchild (onsemi)FDP39N20Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 3FDP50N06FSC
FDP4D5N10ConsemiMOSFET N-CH 100V 128A TO220-3FDP42AN15AOFSCFDP3682onsemiMOSFET N-CH 100V 6A/32A TO220-3FDP51N25 MOSFairchild (onsemi)FDP42AN15A0 MOSFairchild (onsemi)FDP3672 MOSFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.