FDP42AN15A0 Tech Spezifikatioune
onsemi - FDP42AN15A0 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDP42AN15A0
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 42mOhm @ 12A, 10V | |
Power Dissipation (Max) | 150W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 150 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Ta), 35A (Tc) | |
Basis Produktnummer | FDP42 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDP42AN15A0.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDP42AN15A0 | FDP4D5N10C | FDP39N20 | FDP39N20 |
Hiersteller | onsemi | onsemi | Fairchild Semiconductor | onsemi |
Serie | PowerTrench® | PowerTrench® | UniFET™ | UniFET™ |
Package protegéieren | Tube | Tube | Bulk | Tube |
Entworf fir Source Voltage (Vdss) | 150 V | 100 V | 200 V | 200 V |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Power Dissipation (Max) | 150W (Tc) | 2.4W (Ta), 150W (Tc) | 251W (Tc) | 251W (Tc) |
FET Feature | - | - | - | - |
Vgs (Max) | ±20V | ±20V | ±30V | ±30V |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 310µA | 5V @ 250µA | 5V @ 250µA |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 10V | 10V | 10V |
Rds On (Max) @ Id, Vgs | 42mOhm @ 12A, 10V | 4.5mOhm @ 100A, 10V | 66mOhm @ 19.5A, 10V | 66mOhm @ 19.5A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | 68 nC @ 10 V | 49 nC @ 10 V | 49 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 25 V | 5065 pF @ 50 V | 2130 pF @ 25 V | 2130 pF @ 25 V |
Basis Produktnummer | FDP42 | FDP4D5 | - | FDP39 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Ta), 35A (Tc) | 128A (Tc) | 39A (Tc) | 39A (Tc) |
Eroflueden FDP42AN15A0 PDF DataDhusts an onsemi Dokumentatioun fir FDP42AN15A0 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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