FDMS86104 Tech Spezifikatioune
Fairchild Semiconductor - FDMS86104 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDMS86104
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | Power56 | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 24mOhm @ 7A, 10V | |
Power Dissipation (Max) | 2.5W (Ta), 73W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 923 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Ta), 16A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDMS86104.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDMS86104 | FDMS86103L | FDMS86101DC | FDMS86152 |
Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
FET Feature | - | - | - | - |
Supplier Device Package | Power56 | 8-PQFN (5x6) | 8-PQFN (5x6) | 8-PQFN (5x6) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Ta), 16A (Tc) | 12A (Ta), 49A (Tc) | 14.5A (Ta), 60A (Tc) | 14A (Ta), 45A (Tc) |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
Power Dissipation (Max) | 2.5W (Ta), 73W (Tc) | 2.5W (Ta), 104W (Tc) | 3.2W (Ta), 125W (Tc) | 2.7W (Ta), 125W (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 4.5V, 10V | 6V, 10V | 6V, 10V |
Serie | PowerTrench® | PowerTrench® | Dual Cool™, PowerTrench® | PowerTrench® |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 923 pF @ 50 V | 3710 pF @ 50 V | 3135 pF @ 50 V | 3370 pF @ 50 V |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V | 60 nC @ 10 V | 44 nC @ 10 V | 50 nC @ 10 V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 3V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Rds On (Max) @ Id, Vgs | 24mOhm @ 7A, 10V | 8mOhm @ 12A, 10V | 7.5mOhm @ 14.5A, 10V | 6mOhm @ 14A, 10V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.