FDMS86150A Tech Spezifikatioune
onsemi - FDMS86150A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDMS86150A
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | Power56 | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 4.85mOhm @ 16A, 10V | |
Power Dissipation (Max) | 2.7W (Ta), 113W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4665 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Ta), 60A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDMS86150A.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDMS86150A | FDMS86163P | FDMS86152 | FDMS86150 |
Hiersteller | onsemi | onsemi | Fairchild Semiconductor | onsemi |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Power Dissipation (Max) | 2.7W (Ta), 113W (Tc) | 2.5W (Ta), 104W (Tc) | 2.7W (Ta), 125W (Tc) | 2.7W (Ta), 156W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 6V, 10V | 6V, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Ta), 60A (Tc) | 7.9A (Ta), 50A (Tc) | 14A (Ta), 45A (Tc) | 16A (Ta), 60A (Tc) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Supplier Device Package | Power56 | 8-PQFN (5x6) | 8-PQFN (5x6) | 8-PQFN (5x6) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±25V | ±20V | ±20V |
Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V | 59 nC @ 10 V | 50 nC @ 10 V | 62 nC @ 10 V |
Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
Rds On (Max) @ Id, Vgs | 4.85mOhm @ 16A, 10V | 22mOhm @ 7.9A, 10V | 6mOhm @ 14A, 10V | 4.85mOhm @ 16A, 10V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 4665 pF @ 50 V | 4085 pF @ 50 V | 3370 pF @ 50 V | 4065 pF @ 50 V |
Eroflueden FDMS86150A PDF DataDhusts an onsemi Dokumentatioun fir FDMS86150A - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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