FDMA8884 Tech Spezifikatioune
Fairchild Semiconductor - FDMA8884 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDMA8884
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Fairchild (onsemi) | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 6-MicroFET (2x2) | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 23mOhm @ 6.5A, 10V | |
Power Dissipation (Max) | 1.9W (Ta) | |
Package / Case | 6-WDFN Exposed Pad | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A (Ta), 8A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDMA8884.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDMA8884 | FDMA86265P | FDMA908PZ | FDMA905P |
Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
Package / Case | 6-WDFN Exposed Pad | 6-WDFN Exposed Pad | 6-WDFN Exposed Pad | 6-WDFN Exposed Pad |
Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
FET Typ | N-Channel | P-Channel | P-Channel | P-Channel |
Entworf fir Source Voltage (Vdss) | 30 V | 150 V | 12 V | 12 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 6V, 10V | 1.8V, 4.5V | 1.8V, 4.5V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A (Ta), 8A (Tc) | 1A (Ta) | 12A (Ta) | 10A (Ta) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 15 V | 210 pF @ 75 V | 3957 pF @ 6 V | 3405 pF @ 6 V |
Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V | 4 nC @ 10 V | 34 nC @ 4.5 V | 29 nC @ 6 V |
Vgs (Max) | ±20V | ±25V | ±8V | ±8V |
Rds On (Max) @ Id, Vgs | 23mOhm @ 6.5A, 10V | 1.2Ohm @ 1A, 10V | 12.5mOhm @ 12A, 4.5V | 16mOhm @ 10A, 4.5V |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 1.9W (Ta) | 2.4W (Ta) | 2.4W (Ta) | 2.4W (Ta) |
Supplier Device Package | 6-MicroFET (2x2) | 6-MicroFET (2x2) | 6-MicroFET (2x2) | 6-MicroFET (2x2) |
Vgs (th) (Max) @ Id | 3V @ 250µA | 4V @ 250µA | 1V @ 250µA | 1V @ 250µA |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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