FDMA86108LZ Tech Spezifikatioune
Fairchild Semiconductor - FDMA86108LZ technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDMA86108LZ
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 6-MicroFET (2x2) | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 243mOhm @ 2.2A, 10V | |
| Power Dissipation (Max) | 2.4W (Ta) | |
| Package / Case | 6-WDFN Exposed Pad | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 163 pF @ 50 V | |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.2A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDMA86108LZ.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FDMA86108LZ | FDMA8878 | FDMA8884 | FDMA8884 |
| Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | onsemi |
| Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 163 pF @ 50 V | 720 pF @ 15 V | 450 pF @ 15 V | 450 pF @ 15 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Rds On (Max) @ Id, Vgs | 243mOhm @ 2.2A, 10V | 16mOhm @ 9A, 10V | 23mOhm @ 6.5A, 10V | 23mOhm @ 6.5A, 10V |
| Package / Case | 6-WDFN Exposed Pad | 6-WDFN Exposed Pad | 6-WDFN Exposed Pad | 6-WDFN Exposed Pad |
| Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
| Power Dissipation (Max) | 2.4W (Ta) | 2.4W (Ta) | 1.9W (Ta) | 1.9W (Ta) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.2A (Ta) | 9A (Ta), 10A (Tc) | 6.5A (Ta), 8A (Tc) | 6.5A (Ta), 8A (Tc) |
| Entworf fir Source Voltage (Vdss) | 100 V | 30 V | 30 V | 30 V |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 10 V | 12 nC @ 10 V | 7.5 nC @ 10 V | 7.5 nC @ 10 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Supplier Device Package | 6-MicroFET (2x2) | 6-MicroFET (2x2) | 6-MicroFET (2x2) | 6-MicroFET (2x2) |
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FDMA8878 MOSAMI Semiconductor/onsemiFDMA8051LonsemiMOSFET N-CH 40V 10A 6MICROFETFDMA86551LonsemiMOSFET N-CH 60V 7.5A 6MICROFETFDMA7672 MOSFairchild (onsemi)FDMA86251onsemiMOSFET N-CH 150V 2.4A 6MICROFETFDMA7672onsemiMOSFET N-CH 30V 9A 6MICROFETFDMA86151LonsemiMOSFET N-CH 100V 3.3A 6MICROFETFDMA7670Fairchild SemiconductorSMALL SIGNAL FIELD-EFFECT TRANSIFDMA86551LFairchild SemiconductorSMALL SIGNAL FIELD-EFFECT TRANSIFDMA7670onsemiMOSFET N-CH 30V 11A 6MICROFETFDMA86265PonsemiMOSFET P-CH 150V 1A 6MICROFET| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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