FDFMA3P029Z Tech Spezifikatioune
Fairchild Semiconductor - FDFMA3P029Z technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FDFMA3P029Z
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 6-MLP (2x2) | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 87mOhm @ 3.3A, 10V | |
| Power Dissipation (Max) | 1.4W (Ta) | |
| Package / Case | 6-WDFN Exposed Pad | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 435 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | Schottky Diode (Isolated) | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.3A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FDFMA3P029Z.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | FDFMA3P029Z | FDFS2P102A | FDFMA2P853 | FDFMA2P853 |
| Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
| Package protegéieren | Bulk | Bulk | Bulk | Tape & Reel (TR) |
| Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V | 3 nC @ 5 V | 6 nC @ 4.5 V | 6 nC @ 4.5 V |
| Package / Case | 6-WDFN Exposed Pad | 8-SOIC (0.154", 3.90mm Width) | 6-VDFN Exposed Pad | 6-VDFN Exposed Pad |
| Rds On (Max) @ Id, Vgs | 87mOhm @ 3.3A, 10V | 125mOhm @ 3.3A, 10V | 120mOhm @ 3A, 4.5V | 120mOhm @ 3A, 4.5V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| FET Feature | Schottky Diode (Isolated) | Schottky Diode (Isolated) | Schottky Diode (Isolated) | Schottky Diode (Isolated) |
| Input Capacitance (Ciss) (Max) @ Vds | 435 pF @ 15 V | 182 pF @ 10 V | 435 pF @ 10 V | 435 pF @ 10 V |
| Supplier Device Package | 6-MLP (2x2) | 8-SOIC | 6-MicroFET (2x2) | 6-MicroFET (2x2) |
| Entworf fir Source Voltage (Vdss) | 30 V | 20 V | 20 V | 20 V |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 1.3V @ 250µA | 1.3V @ 250µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.3A (Ta) | 3.3A (Ta) | 3A (Ta) | 3A (Ta) |
| Power Dissipation (Max) | 1.4W (Ta) | 900mW (Ta) | 1.4W (Ta) | 1.4W (Ta) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
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FDFS2P102AonsemiMOSFET P-CH 20V 3.3A 8SOICFDFMA3W109Fairchild (onsemi)FDFME3N311ZTFairchild SemiconductorMOSFET N-CH 30V 1.8A 6UMLPFDFS2P102onsemiMOSFET P-CH 20V 3.3A 8SOICFDFMA3N109onsemiMOSFET N-CH 30V 2.9A 6MICROFETFDFS2P102Fairchild SemiconductorMOSFET P-CH 20V 3.3A 8SOICFDFMA3N109Fairchild SemiconductorSMALL SIGNAL FIELD-EFFECT TRANSI| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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