FDFMA3N109 Tech Spezifikatioune
onsemi - FDFMA3N109 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDFMA3N109
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 6-MicroFET (2x2) | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 123mOhm @ 2.9A, 4.5V | |
Power Dissipation (Max) | 1.5W (Ta) | |
Package / Case | 6-VDFN Exposed Pad | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | Schottky Diode (Isolated) | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.9A (Tc) | |
Basis Produktnummer | FDFMA3 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDFMA3N109.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDFMA3N109 | FDFS2P102 | FDFME3N311ZT | FDFS2P102 |
Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
FET Feature | Schottky Diode (Isolated) | Schottky Diode (Isolated) | - | Schottky Diode (Isolated) |
Supplier Device Package | 6-MicroFET (2x2) | 8-SOIC | 6-UMLP (1.6x1.6) | 8-SOIC |
Serie | PowerTrench® | - | PowerTrench® | - |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 4.5V, 10V | - | 4.5V, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | 2V @ 250µA | 1.5V @ 250µA | 2V @ 250µA |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Tape & Reel (TR) |
FET Typ | N-Channel | P-Channel | N-Channel | P-Channel |
Power Dissipation (Max) | 1.5W (Ta) | 900mW (Ta) | 600mW (Ta) | 900mW (Ta) |
Entworf fir Source Voltage (Vdss) | 30 V | 20 V | 30 V | 20 V |
Basis Produktnummer | FDFMA3 | - | - | FDFS2 |
Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 15 V | 270 pF @ 10 V | 75 pF @ 15 V | 270 pF @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.9A (Tc) | 3.3A (Ta) | 1.8A (Ta) | 3.3A (Ta) |
Package / Case | 6-VDFN Exposed Pad | 8-SOIC (0.154", 3.90mm Width) | 6-UFDFN Exposed Pad | 8-SOIC (0.154", 3.90mm Width) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 123mOhm @ 2.9A, 4.5V | 125mOhm @ 3.3A, 10V | 299mOhm @ 1.6A, 4.5V | 125mOhm @ 3.3A, 10V |
Vgs (Max) | ±12V | ±20V | ±12V | ±20V |
Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 4.5 V | 10 nC @ 10 V | 1.4 nC @ 4.5 V | 10 nC @ 10 V |
Eroflueden FDFMA3N109 PDF DataDhusts an onsemi Dokumentatioun fir FDFMA3N109 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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