FCP4N60 Tech Spezifikatioune
Fairchild Semiconductor - FCP4N60 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - FCP4N60
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | SuperFET™ | |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 10V | |
| Power Dissipation (Max) | 50W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 16.6 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.9A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor FCP4N60.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | FCP4N60 | FCP380N60 | FCP380N60E | FCP36N60N |
| Hiersteller | Fairchild Semiconductor | onsemi | Fairchild Semiconductor | onsemi |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | SuperFET™ | SuperFET® II | SuperFET® II | SupreMOS™ |
| Vgs (Max) | ±30V | ±20V | ±20V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 25 V | 1665 pF @ 25 V | 1770 pF @ 25 V | 4785 pF @ 100 V |
| Vgs (th) (Max) @ Id | 5V @ 250µA | 3.5V @ 250µA | 3.5V @ 250µA | 4V @ 250µA |
| Power Dissipation (Max) | 50W (Tc) | 106W (Tc) | 106W (Tc) | 312W (Tc) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.6 nC @ 10 V | 40 nC @ 10 V | 45 nC @ 10 V | 112 nC @ 10 V |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Package protegéieren | Bulk | Tube | Bulk | Bulk |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.9A (Tc) | 10.2A (Tc) | 10.2A (Tc) | 36A (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 10V | 380mOhm @ 5A, 10V | 380mOhm @ 5A, 10V | 90mOhm @ 18A, 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| FET Feature | - | - | - | - |
FCP7N60 MOSFairchild (onsemi)FCP380N60onsemiMOSFET N-CH 600V 10.2A TO220-3FCP7N80CFairchild (onsemi)FCP380N60EFairchild SemiconductorMOSFET N-CH 600V 10.2A TO220-3FCP36N60N MOSFairchild (onsemi)FCP36N60NonsemiPOWER MOSFET, N-CHANNEL, SUPREMOFCP600N60ZFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, NFCP400N80ZonsemiMOSFET N-CH 800V 14A TO220-3FCP380N60Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 1FCP360N65S3R0onsemiMOSFET N-CH 650V 10A TO220-3FCP380N60EonsemiMOSFET N-CH 600V 10.2A TO220-3FCP4N80Fairchild (onsemi)FCP850N80ZONsemiFCP7N60onsemiMOSFET N-CH 600V 7A TO220-3FCP4N60onsemiMOSFET N-CH 600V 3.9A TO220-3FCP650N80ZONsemiFCP600N60ZonsemiMOSFET N-CH 600V 7.4A TO220-3FCP3N80CFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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