FCP380N60 Tech Spezifikatioune
onsemi - FCP380N60 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FCP380N60
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 3.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | SuperFET® II | |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5A, 10V | |
| Power Dissipation (Max) | 106W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1665 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.2A (Tc) | |
| Basis Produktnummer | FCP380 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | Not Applicable |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FCP380N60.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FCP380N60 | FCP600N60Z | FCP400N80Z | FCP380N60 |
| Hiersteller | onsemi | Fairchild Semiconductor | onsemi | Fairchild Semiconductor |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | 26 nC @ 10 V | 56 nC @ 10 V | 40 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5A, 10V | 600mOhm @ 3.7A, 10V | 400mOhm @ 5.5A, 10V | 380mOhm @ 5A, 10V |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Serie | SuperFET® II | SuperFET® II | SuperFET® II | SuperFET® II |
| Power Dissipation (Max) | 106W (Tc) | 89W (Tc) | 195W (Tc) | 106W (Tc) |
| Basis Produktnummer | FCP380 | - | FCP400 | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.2A (Tc) | 7.4A (Tc) | 14A (Tc) | 10.2A (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Vgs (th) (Max) @ Id | 3.5V @ 250µA | 3.5V @ 250µA | 4.5V @ 1.1mA | 3.5V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 1665 pF @ 25 V | 1120 pF @ 25 V | 2350 pF @ 1000 V | 1665 pF @ 25 V |
| FET Feature | - | - | - | - |
| Package protegéieren | Tube | Bulk | Tube | Bulk |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 800 V | 600 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Eroflueden FCP380N60 PDF DataDhusts an onsemi Dokumentatioun fir FCP380N60 - onsemi.
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FCP36N60NonsemiPOWER MOSFET, N-CHANNEL, SUPREMOFCP2N80Fairchild (onsemi)FCP260N60EFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, N| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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