EGP10G Tech Spezifikatioune
Fairchild Semiconductor - EGP10G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - EGP10G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 400 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-204AL (DO-41) | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 50 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AL, DO-41, Axial | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 400 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor EGP10G.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | EGP10G | EGP10B-E3/73 | EGP10J | EGP10A-E3/54 |
| Hiersteller | Fairchild Semiconductor | Vishay General Semiconductor - Diodes Division | Fairchild Semiconductor | Vishay General Semiconductor - Diodes Division |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 1 A | 950 mV @ 1 A | 1.7 V @ 1 A | 950 mV @ 1 A |
| Serie | - | SUPERECTIFIER® | - | SUPERECTIFIER® |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | DO-204AL (DO-41) | DO-204AL (DO-41) | DO-204AL (DO-41) | DO-204AL (DO-41) |
| Package / Case | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial |
| Voltage - DC Reverse (Vr) (Max) | 400 V | 100 V | 600 V | 50 V |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 400 V | 5 µA @ 100 V | 5 µA @ 600 V | 5 µA @ 50 V |
| Package protegéieren | Bulk | Tape & Box (TB) | Bulk | Tape & Reel (TR) |
| Technologie | Standard | Standard | Standard | Standard |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C |
| Reverse Recovery Time (trr) | 50 ns | 50 ns | 75 ns | 50 ns |
| Capacitance @ Vr, F. | - | 22pF @ 4V, 1MHz | - | 22pF @ 4V, 1MHz |
EGP13-08FUJIIGBT ModuleEGP13-12FUJIIGBT ModuleEGP10B-E3/73Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 100V 1A DO204ALEGP10JFairchild SemiconductorDIODE GEN PURP 600V 1A DO204AL
EGP04-25Fujitsu Electronics America, Inc.IGBT ModuleEGP10A-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 50V 1A DO204AL
EGP10D-E3Electro-Films (EFI) / VishayEGP10D-E3/73Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 1A DO204ALEGP10G-E3/73Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 1A DO204AL
EGP10DonsemiDIODE GEN PURP 200V 1A DO41EGP10GonsemiDIODE GEN PURP 400V 1A DO41EGP10DFairchild SemiconductorRECTIFIER DIODE, 1A, 200V, DO-41EGP13-04FUJIIGBT ModuleEGP13-06FUJIIGBT ModuleEGP13-10FUJIIGBT ModuleEGP10DE-E3/41Electro-Films (EFI) / Vishay
EGP10JonsemiDIODE GEN PURP 600V 1A DO204ALEGP13-02FUJIIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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