EGP10D Tech Spezifikatioune
onsemi - EGP10D technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - EGP10D
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-41 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 50 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AL, DO-41, Axial | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | EGP10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi EGP10D.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | EGP10D | EGP10D-E3/73 | EGP10G | EGP10J |
| Hiersteller | onsemi | Vishay General Semiconductor - Diodes Division | Fairchild Semiconductor | Fairchild Semiconductor |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 200 V | 400 V | 600 V |
| Basis Produktnummer | EGP10 | EGP10 | - | EGP10 |
| Technologie | Standard | Standard | Standard | Standard |
| Serie | - | SUPERECTIFIER® | - | - |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 200 V | 5 µA @ 200 V | 5 µA @ 400 V | 5 µA @ 600 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C |
| Package / Case | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial |
| Supplier Device Package | DO-41 | DO-204AL (DO-41) | DO-204AL (DO-41) | DO-204AL (DO-41) |
| Reverse Recovery Time (trr) | 50 ns | 50 ns | 50 ns | 75 ns |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 1 A | 950 mV @ 1 A | 1.25 V @ 1 A | 1.7 V @ 1 A |
| Capacitance @ Vr, F. | - | 22pF @ 4V, 1MHz | - | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 1A |
| Package protegéieren | Tape & Reel (TR) | Tape & Box (TB) | Bulk | Bulk |
Eroflueden EGP10D PDF DataDhusts an onsemi Dokumentatioun fir EGP10D - onsemi.
EGP10D-E3/73Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 1A DO204ALEGP10GFairchild SemiconductorRECTIFIER DIODE, 1A, 400V, DO-41
EGP10D-E3Electro-Films (EFI) / VishayEGP10JFairchild SemiconductorDIODE GEN PURP 600V 1A DO204AL
EGP13-12FUJIIGBT ModuleEGP10DE-E3/41Electro-Films (EFI) / VishayEGP13-08FUJIIGBT ModuleEGP10G-E3/73Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 1A DO204AL
EGP04-25Fujitsu Electronics America, Inc.IGBT Module
EGP10JonsemiDIODE GEN PURP 600V 1A DO204ALEGP13-02FUJIIGBT ModuleEGP10GonsemiDIODE GEN PURP 400V 1A DO41EGP10DFairchild SemiconductorRECTIFIER DIODE, 1A, 200V, DO-41EGP13-06FUJIIGBT ModuleEGP13-10FUJIIGBT ModuleEGP13-04FUJIIGBT ModuleEGP10A-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 50V 1A DO204ALEGP10B-E3/73Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 100V 1A DO204AL| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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