BS170-D26Z Tech Spezifikatioune
Fairchild Semiconductor - BS170-D26Z technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - BS170-D26Z
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 3V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-92-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 10V | |
| Power Dissipation (Max) | 830mW (Ta) | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 500mA (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor BS170-D26Z.
| Produktiounsattriff |  |
 |
|
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|---|---|---|---|---|
| Part Number | BS170-D26Z | BS170RLRAG | BS170-D75Z | BS170G |
| Hiersteller | Fairchild Semiconductor | onsemi | onsemi | onsemi |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 3V @ 1mA | 3V @ 1mA | 3V @ 1mA | 3V @ 1mA |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V | 60 pF @ 10 V | 40 pF @ 10 V | 60 pF @ 10 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V |
| Supplier Device Package | TO-92-3 | TO-92 (TO-226) | TO-92-3 | TO-92 (TO-226) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 10V | 5Ohm @ 200mA, 10V | 5Ohm @ 200mA, 10V | 5Ohm @ 200mA, 10V |
| Package protegéieren | Bulk | Tape & Reel (TR) | Cut Tape (CT) | Tube |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 500mA (Ta) | 500mA (Ta) | 500mA (Ta) | 500mA (Ta) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 Long Body |
| Power Dissipation (Max) | 830mW (Ta) | 350mW (Ta) | 830mW (Ta) | 350mW (Ta) |
| Serie | - | - | - | - |
BS108 MOSAMI Semiconductor/onsemi
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BS170KLElectro-Films (EFI) / VishayBS170-D75ZonsemiMOSFET N-CH 60V 500MA TO92-3BS15.021SCHMIDTBS170GonsemiMOSFET N-CH 60V 500MA TO92-3
BS120E0FSharp MicroelectronicsSENSOR PHOTODIODE 560NM SIDEBS170D26ZFSCBS107RL1AMI Semiconductor/onsemi
BS170 MOSFairchild (onsemi)BS170-D26ZonsemiMOSFET N-CH 60V 500MA TO92-3BS1100N-A1BENCENTBS108ZL1G MOSAMI Semiconductor/onsemi
BS170PDiodes IncorporatedMOSFET N-CH 60V 270MA TO92-3BS108ZL1GonsemiMOSFET N-CH 200V 250MA TO92-3
BS170FTADiodes IncorporatedMOSFET N-CH 60V 0.15MA SOT23-3BS170FTA MOSDiodes Incorporated| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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